Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode
DC Field | Value | Language |
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dc.contributor.author | Han, Sang-Woo | - |
dc.contributor.author | Park, Sung-Hoon | - |
dc.contributor.author | Kim, Hyun-Seop | - |
dc.contributor.author | Lim, Jongtae | - |
dc.contributor.author | Cho, Chun-Hyung | - |
dc.contributor.author | Cha, Young | - |
dc.date.available | 2020-07-10T06:05:48Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/8010 | - |
dc.description.abstract | This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEK PUBLICATION CENTER | - |
dc.title | Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, Jongtae | - |
dc.contributor.affiliatedAuthor | Cho, Chun-Hyung | - |
dc.identifier.doi | 10.5573/JSTS.2016.16.2.221 | - |
dc.identifier.scopusid | 2-s2.0-84964803312 | - |
dc.identifier.wosid | 000375763900014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 16 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002100877 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | AlGaN/GaN heterojunction field-effect transistor | - |
dc.subject.keywordAuthor | clamp circuit | - |
dc.subject.keywordAuthor | normally-off operation | - |
dc.subject.keywordAuthor | Schottky gate | - |
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