Micro-Power Generation Characteristics of Thermoelectric Thin Film Devices Processed by Electrodeposition and Flip-Chip Bonding
DC Field | Value | Language |
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dc.contributor.author | Shin, Kang-Je | - |
dc.contributor.author | Oh, Tae-Sung | - |
dc.date.available | 2020-07-10T07:05:41Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9813 | - |
dc.description.abstract | A thermoelectric thin film device of cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bonding bumps electrodeposited on the Ti/Cu/Au electrodes in the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin film legs electrodeposited on the Ti/Cu/Au electrodes in the bottom substrate. Using the output voltage-current curve, the internal resistance of the thin film device was measured to be 21.4 Omega at temperature differences of 9.8-39.7 K across the device. The thin film device exhibited an open-circuit voltage of 320 mV and a maximum output power of 1.1 mW with a power density of 3.84 mW/cm(2) at a temperature difference of 39.7 K applied across the thin film device. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | BISMUTH-TELLURIDE | - |
dc.subject | PACKAGES | - |
dc.title | Micro-Power Generation Characteristics of Thermoelectric Thin Film Devices Processed by Electrodeposition and Flip-Chip Bonding | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Tae-Sung | - |
dc.identifier.doi | 10.1007/s11664-015-3647-2 | - |
dc.identifier.scopusid | 2-s2.0-84939978008 | - |
dc.identifier.wosid | 000353813700094 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRONIC MATERIALS, v.44, no.6, pp.2026 - 2033 | - |
dc.relation.isPartOf | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.title | JOURNAL OF ELECTRONIC MATERIALS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2026 | - |
dc.citation.endPage | 2033 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BISMUTH-TELLURIDE | - |
dc.subject.keywordPlus | PACKAGES | - |
dc.subject.keywordAuthor | Thermoelectric device | - |
dc.subject.keywordAuthor | thin film | - |
dc.subject.keywordAuthor | bismuth telluride | - |
dc.subject.keywordAuthor | antimony telluride | - |
dc.subject.keywordAuthor | flip chip | - |
dc.subject.keywordAuthor | anisotropic conductive adhesive | - |
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