AlGaN/GaN MetalOxideSemiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation
DC Field | Value | Language |
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dc.contributor.author | Han, Sang-Woo | - |
dc.contributor.author | Park, Sung-Hoon | - |
dc.contributor.author | Lee, Jae-Gil | - |
dc.contributor.author | Lim, Jongtae | - |
dc.contributor.author | Cha, Ho-Young | - |
dc.date.available | 2020-07-10T07:05:48Z | - |
dc.date.created | 2020-07-06 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9820 | - |
dc.description.abstract | We have developed an AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) integrated with a clamp circuit to enable normally-off operation. A clamp circuit consisting of a multilayer MIM capacitor and a Schottky barrier diode was monolithically integrated with a normally ON AlGaN/GaN MOSHFET. The integrated clamp circuit shifted the input driving signal from (0, 20 V) to (-19.2, 0.8 V), allowing the normally ON AlGaN/GaN MOSHFET with a pinchoff voltage of -14 V to be operated as a normally-off device. The multichannel device with a 5-mm channel width exhibited a drain current density of similar to 470 mA/mm and a breakdown voltage of >900 V. In comparison with other conventional normally-off GaN-based FETs, a higher threshold voltage with high current density (i.e., low ON-resistance) can be achieved with easy device processing, no need for gate recess or complicated epitaxial growth. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | GAN HEMT | - |
dc.title | AlGaN/GaN MetalOxideSemiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lim, Jongtae | - |
dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
dc.identifier.doi | 10.1109/LED.2015.2427202 | - |
dc.identifier.scopusid | 2-s2.0-84930505018 | - |
dc.identifier.wosid | 000355252300004 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.6, pp.540 - 542 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 540 | - |
dc.citation.endPage | 542 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GAN HEMT | - |
dc.subject.keywordAuthor | Clamp circuit | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | monolithic integration | - |
dc.subject.keywordAuthor | metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) | - |
dc.subject.keywordAuthor | normally-off | - |
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