Detailed Information
Cited 6 time in 
Cited 6 time in 
Cited 6 time in
Metadata Downloads
Scaling of Data Retention Statistics in Phase-Change Random Access Memory
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kwon, Yongwoo | - |
| dc.contributor.author | Park, Byoungnam | - |
| dc.contributor.author | Kang, Dae-Hwan | - |
| dc.date.available | 2020-07-10T07:20:27Z | - |
| dc.date.created | 2020-07-06 | - |
| dc.date.issued | 2015-05 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/9947 | - |
| dc.description.abstract | A scaling law on data retention statistics is presented for sub-20-nm phase-change random access memory with a confined cell structure. Nucleation and growth was modeled with phase-field method. Universality encompassing cell size, temperature, and active phase-change material was found. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | CRYSTALLIZATION | - |
| dc.subject | KINETICS | - |
| dc.title | Scaling of Data Retention Statistics in Phase-Change Random Access Memory | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kwon, Yongwoo | - |
| dc.contributor.affiliatedAuthor | Park, Byoungnam | - |
| dc.identifier.doi | 10.1109/LED.2015.2414952 | - |
| dc.identifier.scopusid | 2-s2.0-84928718561 | - |
| dc.identifier.wosid | 000353566300011 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.5, pp.454 - 456 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 36 | - |
| dc.citation.number | 5 | - |
| dc.citation.startPage | 454 | - |
| dc.citation.endPage | 456 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | CRYSTALLIZATION | - |
| dc.subject.keywordPlus | KINETICS | - |
| dc.subject.keywordAuthor | Phase-change random access memory (PC-RAM) | - |
| dc.subject.keywordAuthor | data retention | - |
| dc.subject.keywordAuthor | modeling | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Byoung Nam
- Engineering (Advanced Materials)