ScholarWorks@Hongik: Kim, Tae Wan

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Kim, Tae Wan (김태완)

Engineering (Applied Science)

Research Area: 응집물질물리

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organic lightemitting diodes:16||Organic lightemitting diodes:15||OLEDs:12||electroluminescence:9||Organic LightEmitting Diodes:8||OLED:8||Alq3:6||Luminance:5||luminance:5||PECCP:5||external quantum efficiency:5||External quantum efficiency:5||current density:4||CuPc:4||Buffer layer:4||Alq(3):4||Capacitance:4||DC and AC:3||buffer layer:3||BCP:3||Deposition rate:3||Plasma treatment:3||Organic lightemitting diode:3||selfassembled monolayer:3||currentvoltage characteristics:3||Surface modification:3||Hole transport layer:3||LangmuirBlodgett film:3||holeinjection layer:3||TPD:3||Efficiency improvement:3||FowlerNordheim tunneling:3||photovoltaic effects:3||blue emitting material:3||C60:2||Resistance:2||Emission layer:2||ColeCole plot:2||Selfassembled monolayer:2||exciton blocking layer:2||ITO:2||ITO roughness:2||Mobility:2||Impedance:2||Complex impedance:2||Equivalentcircuit model:2||impedance:2||Ionbeam irradiation:2||SpaceChargeLimited Current:2||Surface resistance:2||liquid crystal alignment:2||Temperatures:2||LangmuirBlodgett films:2||Thickness variation:2||Cs2CO3:2||Transparent conductive electrode:2||Current density:2||Zincphthalocyanine(ZnPc):2||organic semiconductor:2||organics:2||EBL:2||Li2CO3:2||ACOLED:2||Photovoltaic cell:2||polypyrrole:2||Electroless plating:2||Liquid crystal alignment:2||AZO:2||solar cells:2||Postannealing:2||Holeblocking layer:2||Luminous efficiency:2||Luminous power efficiency:2||RF magnetron sputtering:2||electrical properties:2||Electroninjection layer:2||Jones vector:1||LangmuirBlodgett techniques:1||Langmuirblodgett(LB) method:1||Langmuirblodgett(LB) thin film:1||Lanthanumdoped zinc oxide:1||Lanthanumdoped zinc oxide solution process:1||Li2CO3 and Cs2CO3:1||Li2O:1||LiF layer:1||LiF/Al cathode:1||Lifetime:1||Lightextraction efficiency:1||Liquid crystal:1||Liquid crystal switching:1||Lithium fluoride:1||Luminance efficiency:1||MATHEMATICA Simulation:1||MOSFET:1||MWCNT:1||Microcavity:1||Microlens:1||Microlens array:1||Modulated Photocurrent:1||Modulated photocurrent:1||Moisture:1||Molybdenum trioxide:1||Negative differential resistance:1||Nickel:1||Nickel thin film:1||Operating voltage:1||Organic:1||Organic lightemitting Diodes:1||Outcoupled efficiency:1||Outcoupling efficiency:1||Oxygen plasma:1||PEDOT: PSS:1||PFVDPV:1||PFVTPV:1||PFVYCFV:1||PTFE:1||PVK):1||Pentacene:1||Photoluminescent:1||Photovoltaic device:1||Polarization mode platform:1||Polyimide:1||Polypropylene:1||PooleFrenkel:1||Posttransitionmetal chalcogenides:1||Power conversion efficiency:1||Power conversion efficiency (PCE):1||RC equivalent circuit:1||RGB color spectrum:1||Randomtextured film:1||Recombination rate:1||Samarium Doped IndiumTinOxide:1||Schottky:1||Sensor:1||Sheet resistance:1||Simulation:1||Sinusoidal wave:1||SinusoidalWave:1||Solgel:1||Solution process:1||Solution processing:1||Space Charge:1||Square wave:1||SquareWave:1||Stability:1||TCNQ:1||TeflonAF:1||Thermoelectric:1||Top emission:1||Topemission:1||Transmittance:1||Xray photoelectron spectroscopy:1||Zinc oxide:1||Zinctin oxide:1||alkyl carbazole derivatives:1||annealing:1||arachidic acid:1||band gap:1||bicarbazyl:1||bis(3Nethylcarbazolyl)cyanoterephthalidene (BECCP):1||bithiazole:1||builtin voltage:1||carbazole derivatives:1||conduction mechanism:1||conductive mechanism:1||contact resistance:1||copper phthalocyanine:1||current efficiency:1||currentvoltageluminance characteristics:1||cyclic voltammetry:1||deposition rate:1||dielectric loss:1||dielectric properties:1||differential scanning calorimetry:1||dithiafulvene:1||efficiency improvement:1||electrooptical characteristics:1||electroninjection materials:1||electronegativity:1||energy barrier height:1||energy transfer:1||equivalent circuit:1||extraction:1||extrinsic:1||frequency:1||frequency dependence:1||frequencydependent response:1||hopping model:1||indium doped zinc oxide:1||indiumtinoxide:1||interface:1||interface resistance:1||interference:1||intrinsic resistance:1||ionbeam exposure:1||ionbeam irradiation:1||light outcoupling:1||lightemitting devices:1||metal carbonates:1||microcavity:1||microlens arrays:1||modulated photocurrent:1||negative resistance:1||operating voltage:1||organic electroluminescence:1||organic electroluminescent devices:1||organic film:1||organic light emitting diode:1||organic lightemitting diode:1||organic lightemtting diodes:1||oxidation potential:1||parasitic resistance:1||permittivity:1||photoluminescence:1||photoluminescence (PL):1||photovoltaic effect:1||polishing:1||poly(3,6N2ethylhexylcarbazolyl cyanoterephthalidene (PECCP):1||poly(Nvinylcarbazole):1||poly(methylphenylsilane):1||polyamic acid alkylamine salt:1||polyamic acid alkylamine salts:1||polytetrafluorethylene:1||power conversion efficiency:1||pulsed laser deposition (PLD):1||residual DC:1||roughnes:1||roughness:1||solar cell:1||solutionprocessing:1||source resistance:1||space charge:1||spacechargelimited current:1||spectrum:1||surface reformation:1||surface roughness:1||surface treatment:1||temperature:1||temperature dependence:1||thermally stimulated current:1||thermallystimulated currents zeta:1||thermogravimetric analysis:1||top emission:1||trap:1||tunneling:1||twistednematic mode:1||voltammetry:1||wet process:1||2mercapto5nitrobenzimidazole:1||wide band gap:1||Acrylonitrilebutadienestyrene (ABS):1||Acrylonitrilebutadienestyrene plastic:1||Alkalimetal carbonates:1||Alkyl chain:1||Alternating current:1||Amorphous fluoropolymer:1||Arrhenius plot:1||Atmospheric plasma:1||Atomic force microscope:1||Atomic force microscopy:1||Average roughness:1||BCP (bathocuproine):1||BECCIP:1||Bio membrane:1||Bismuthdoped tin oxide:1||Bithiazole:1||Blueemitting material:1||Builtin Voltage:1||Builtin voltage:1||C22quinolinium(TCNQ):1||CF3:1||Capacitancevoltage hysteresis:1||Carrier concentration:1||Cesium carbonate:1||Charge Transport:1||Charge recombination:1||Chemical foaming agent:1||Copper(II)phthalocyanine:1||CopperPhtalocyanine:1||Currentvoltage characteristics:1||Currentvoltageluminance characteristics:1||DMPE:1||Deposition rate, efficiency improvement:1||Dielectric barrier discharge:1||Dielectric barrier discharge (DBD):1||Dielectric constant:1||Dielectric properties:1||Dipole:1||Doping:1||Drain resistance:1||Duty Ratio:1||EA:1||Electrical Conductive mechanism:1||Electrical properties:1||Electrically controlled birefringence mode:1||Electrooptical performance:1||Electrooptical properties:1||Electron Injection Layer:1||Electron Injection layer:1||Element lineup:1||Energy barrier:1||Energyconversion efficiency:1||Etching:1||Externalquantum efficiency:1||FSAM:1||FETtype:1||Fieldeffect transistors:1||Fluorocarbon:1||FolwerNordheim:1||Fourpoint probe:1||Fowlernordheim tunneling:1||Gallium Doped Indium Zinc Oxides:1||Gas sensor:1||HIL:1||Helicity:1||Hole injection layer(PTFE:1||Holeinjection layer:1||Holeinjection materials:1||Holesize of evaporation boat:1||Humidity:1||IP:1||Indiumdoped zinc oxide:1||Inelastic electron tunneling spectroscopy(IETS):1||Interface resistance:1||Ionbeam:1||

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