ScholarWorks@Hongik: Pak, Sangyeon

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Pak, Sangyeon (박상연)

Engineering (Electronic & Electrical Engineering)

Research Area: 이차원소재, 전자소자, 광전자소자, 2D Materials, Electronic device, Optoelectronic device

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quantum dots:4||MoS2 monolayer:4||copper sulfide:4||printed electronics:3||contact engineering:3||hydrogen evolution reaction:2||synaptic device:2||microsupercapacitors:2||2D materials:2||transition metal dichalcogenides:2||Flexible energy storage device:2||carbon nanotube (CNT):2||interlayer coupling:2||flexible energy storage device:2||flexible photodetector:2||electric field enhancement:2||van der Waals heterostructures:2||lead sulfide quantum dots:2||lightemitting diodes:2||strain engineering:2||sulfurization:2||supercapacitors:2||ferroelectric effect:2||Microsupercapcitors:2||Graphene supercapacitor:1||H<sup>+</sup> ion insertion:1||Heteroatom:1||Heteroatom transition metal chalcogenide:1||Heterostructures:1||Hierarchical assembly:1||Hierarchical heterostructure:1||Hybrid solar cell:1||Light scattering:1||Mn2O3:1||MnO<sub>2</sub>:1||Mo1xWxS2 alloy:1||MoS:1||MoS(2)monolayer:1||MoS2:1||MoS2 monolayers:1||MoS2/WS2:1||NAND flash memory:1||NOR flash memory:1||Nearfield oscillation:1||Neuron circuits:1||NiSO compound:1||Oxygen vacancy:1||P(VDFTrFE):1||P(VDFTrFECTFE):1||Ptype doping:1||PbS:1||PbS quantum dot:1||Phtalocyanine:1||Plasmonic effect:1||Porous network structure:1||Quantum dot:1||Quantum dot solar cell:1||Rate coding:1||Reduced binary anion:1||Steep switching device:1||Supercapacitor:1||Supercapacitors:1||TMDs:1||Tailored oxygen vacancy:1||Ternary transition metal oxides:1||Tubular shellcoreshell:1||WS2/MoS2 heterostructure:1||Zn metal anode:1||adsorbed molecules:1||adsorption isotherm:1||annealing:1||aqueous zinc ion batteries:1||asymmetric supercapacitor:1||band gap transition:1||bilayer MoS2:1||bilayer WS2:1||builtin potential:1||charge carrier dynamics:1||charge carrier transport:1||charge transport modulation:1||chemical vapor deposition:1||chemical vapor deposition (CVD):1||colloidal synthesis:1||contact resistance:1||continuous laser scribing:1||controlled aspect ratio:1||copper chloride:1||coreshell structure:1||crystal orientations:1||density functional theory:1||device integration:1||dipole structures:1||doping:1||electrochemical behavior:1||electrochemical reaction kinetics:1||electrode dopants:1||electromagnetic interference shielding:1||electron microscopy:1||energy level engineering:1||energy storage:1||energy storage material:1||fast photodetectors:1||ferroelectric phase:1||ferroelectric polymers:1||fiber electronics:1||flash memory:1||flexible devices:1||flexible electronics:1||flexible solar cells:1||graphene supercapacitor:1||growth parameters:1||halide doping:1||heterojunction interface:1||heterojunctions:1||hexagonal boron nitride:1||hexagonal boron nitride (hBN):1||hierarchical structure:1||hierarchical structures:1||high current operation:1||high mobility transistor:1||highdurability catalysts:1||hybrid energy harvesting:1||hybrid phototransistors:1||hydrogen evolution reaction (HER):1||inmemory computing:1||inkjet printing:1||inkjetprinted carbon nanotubes:1||interface engineering graphene:1||interlayer interactions:1||iodine doping:1||laserscribing method:1||longterm stability:1||low subthreshold swing:1||lowfrequency Raman modes:1||lowfrequency noise:1||mechanical energy harvesting:1||microsupercapacitors:1||mixeddimensional heterojunction:1||molybdenum disulfide:1||molybdenum disulfide (MoS2):1||molybdenum disulphide (MoS2):1||monolayered MoS2:1||morphology:1||multivaluedlogic:1||ndoping effect:1||nanowire FET:1||nanowire architecture:1||neuromorphic:1||ohmic contacts:1||one pot doping:1||onepot CVD synthesis:1||optical imaging:1||ptype doping:1||ptype nanowires:1||paraelectric phase:1||peeloff force:1||phase transition:1||photodetector:1||photodetectors:1||photoresponse behavior:1||phototransistor:1||photovoltaics:1||piezophototronic:1||piezoelectric effect:1||post chemical treatments:1||recombination:1||retinomorphic device:1||scalable fabrication:1||scattering:1||selfassembledmonolayer doping:1||selfcharging:1||selfhealing:1||selfhealing effect:1||semimetallic electrodes:1||sharp electrodes:1||solar cell:1||solvent annealing:1||spin coating:1||structural stability:1||supersaturation level:1||surface functionalization:1||surface tension:1||surface treatment:1||surfaceenhanced Raman spectroscopy:1||surfaceenergy:1||synaptic plasticity:1||ternary circuit:1||transition metal chloride:1||transition metal sulfide:1||transparent conductive electrodes:1||triboelectric energy generators:1||tunable switching threshold:1||ultrasensitive photodetection:1||ultrathin thickness:1||vapor corrosion:1||white light:1||(2):1||work function modulation:1||1/f noise:1||2D MoS2:1||2D TMDC:1||2D electronics:1||2D heterostructure:1||2D interlayer:1||2D structures:1||2D transfer:1||2D transition metal dichalcogenides:1||3D graphene:1||AND flash memory:1||Charge transfer:1||Colloidal quantum dot:1||CuS contact:1||CuS electrodes:1||CuS nanosheet:1||Deep spiking neural networks:1||Doping:1||Electrochemical performance:1||Energy storage system:1||Exciton dissociation:1||Faradaic redox reaction:1||Graphene:1||

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