ScholarWorks@Hongik: Lee, Sung-Tae

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Lee, Sung-Tae (이성태)

Engineering (Electronic & Electrical Engineering)

Research Area: 인공지능 반도체, 메모리 소자, 반도체 소자, AI Semiconductor, Memory Device, Semiconductor Device

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lowfrequency noise (LFN):3||lowfrequency noise:2||signaltonoise ratio (SNR):2||Communication and Technology industry:1||Conductivity:1||Creep:1||Current measurement:1||Deep spiking neural networks:1||Dynamics:1||FETtype gas sensor:1||Gas detectors:1||Gas sensor:1||Gaussian transistors:1||Hafnium zirconium oxide (HZO):1||Hardware neural networks:1||IGZO:1||Indium–gallium–zinc oxide (IGZO):1||Information:1||Iron:1||Korea:1||L16:1||M52:1||Management control system:1||NAND flash memory:1||NO<inlineformula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchemainstance> <texmath notation=LaTeX>$_{\text{2}}$</texmath> </inlineformula>:1||Neuron circuits:1||O31:1||O32:1||Organic thinfilm transistor (OTFT):1||Organizational innovation:1||Parasitic bipolar junction transistor:1||Process innovation:1||Product innovation:1||Rate coding:1||Reliability:1||Selfcuring method:1||Sensors:1||Signal to noise ratio:1||Steep switching device:1||Stress:1||Switches:1||Temperature measurement:1||Thickness measurement:1||Value chain management:1||amorphous oxide semiconductor (AOS):1||antiambipolarity:1||bias stress:1||density of states:1||domain wall (DW):1||educationjob transferability:1||employee turnover:1||ferroelectric tunnel junction (FTJ):1||hybrid materials:1||inmemory computing:1||job satisfaction:1||levelized cost of energy:1||limit of detection (LOD):1||neuromorphic:1||nitrogen dioxide (NO<inlineformula xmlns:ali=http://www.niso.org/schemas/ali/1.0/ xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink xmlns:xsi=http://www.w3.org/2001/XMLSchemainstance> <texmath notation=LaTeX>$_{\text{2}}$</texmath> </inlineformula>):1||nuclear energy:1||onchip learning:1||photovoltaic energy:1||scaling:1||subgap density of states (DOS):1||subsidies:1||switching mechanism:1||synaptic device:1||thinfilm transistors (TFTs):1||2D finiteelement simulation:1||wind turbines:1||Annealing:1||Boundary conditions:1||

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