ScholarWorks@Hongik: Lee, Jae Ho

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Lee, Jae Ho (이재호)

Engineering (Advanced Materials)

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electroplating:14||Electroplating:12||Electrodeposition:11||via filling:8||pulse plating:8||ULSI:7||electrodeposition:6||copper:6||Cyclic voltammetry:6||SiP:6||composite coating:5||Additive:5||electroless plating:5||Composite coating:5||CdSe:5||SDS:4||additive:4||Porous silicon:4||WC:4||residual stress:4||Electrochemical etching:4||Layer transfer:4||MgAl:4||nickel:4||Ultrasonic:4||Nanorods:4||Copper:3||CdTe:3||Hardness:3||diamond:3||JGB:3||copper electroplating:3||permalloy:3||Via filling:3||Electrochemical deposition:3||Cu via:3||Electroless nickel immersion gold:3||hardness:3||duty cycle:3||Current density:3||Composite:3||complexing agent:3||Water electrolysis:3||Composite plating:3||Dispersion:3||Pulse plating:3||WCCo:2||Wear resistance:2||Permalloy:2||semiadditive:2||Cu2ZnSnS4:2||Leveler:2||sodium citrate:2||Photovoltaic cell:2||Plasma electrolytic oxidation:2||Polarization:2||COF:2||stabilizer:2||subtractive:2||additives:2||Luminescence:2||Porous structure:2||Electroplaing:2||anomalous codepositon:2||Pulse:2||thickness:2||thiourea:2||Pulsereverse:2||RDE:2||Mechanical properties:2||Bi2Te3:2||composite:2||CuxCo3xO4 powders:2||Cyclic Voltammetry:2||wear resistance:2||zeta potential:2||zincate:2||Rhodium:2||corrosion resistance:2||MgZn:2||DC:2||Seed layer:2||dispersion:2||SiC:2||electroless:2||electroless copper:2||electroless copper plating:2||Silica nanopowder:2||electroless nickel plating:2||electronic packaging:2||electropolishing:2||Ni:2||Sn whiskers:2||Ni film:2||NiAlO film:2||NiFe alloy:2||CIC(CuInvarCu):2||Solder resist:2||Flip chip:2||Additives:2||Stack package:2||AAO:2||Codeposition:2||Nickel:2||CMP:2||CMP dishing:2||Open Circuit Voltage:2||leveler:2||lithography:2||System in Package:2||TSV:2||Grain Refinement:2||Thickness:2||Corrosion:2||Corrosion resistance:2||Oxygen evolution reaction:2||TiO2:2||nickeliron:2||organic additive:2||PEI:2||palladium chloride:2||Black pad:2||PRC:2||plasma electrolytic oxidation:2||plating:2||porous carbon:2||pulsereverse:2||pulsereverse plating:2||resistivity:2||Pd pulse current plating:1||Peltier effect:1||Phosphor:1||Phosphorous Acid:1||Photovoltaic:1||Polyimide:1||Porosity:1||Porous carbon:1||Pr3+ doped:1||Pulse Current:1||Pulse Current Electroplating:1||Pulse reverse:1||Rack Plating:1||Reflectance:1||Residual Stress:1||Residual stress:1||Roughness:1||Saccharin:1||Sacrificial Anode:1||Sacrificial anode:1||Seebeck effect:1||Selfassembly:1||Silica Nanopowder:1||Silver:1||SnAg solder:1||SnCu:1||Soft etching:1||SolGel:1||Solder joint reliability:1||Sputtering:1||SrBi2.4Ta2O9 (SBT):1||Structure:1||Substrate temperature:1||Supply of manpower with professional abilities:1||Surface Hardness:1||Surface defects:1||Surface roughness:1||Surfactant:1||TSV 3D SiP:1||Tb3+:1||Thermoelectrics:1||Thick Films:1||Thin films:1||Thiourea:1||Ti electropolishing:1||TiO2 nanopowders:1||Timeresolved photoluminescence:1||Tungsten:1||Tungsten powder:1||Via Filling:1||Vickers hardness:1||VolmerWeber:1||VolmerWeber Type:1||WC(Co):1||Wet Etching:1||Wet etching:1||Xray diffraction:1||ZRA:1||Zeta potential:1||ZnO:1||ZnO Nanorod:1||acetic acid:1||alloy electroplating:1||aluminum:1||aluminum input/output pad:1||annealing:1||anomalous codeposition:1||bath stability:1||black pad:1||bottomup super filling:1||bump:1||butylamine:1||carbon:1||chip stack package:1||codeposition:1||coating time:1||composite plating:1||composition:1||copper plating:1||copper via filling:1||current density:1||current ratio:1||current type:1||cyclicvoltammetry:1||deposition process:1||desmear treatment:1||dishing:1||electrochemical deposition:1||electrode potential:1||electroless NiFe:1||electroless nickel:1||external pressure:1||ferroelectric properties:1||formaldehyde:1||galvanic current:1||gelatin:1||glycerol:1||grain growth:1||grain refinement:1||grain size:1||green phosphor:1||growth:1||hardener:1||high aspect ratio:1||hybrid solar cell:1||inhibitor:1||interconnection:1||iron alloys:1||kinetics:1||magnesium alloy:1||membranes:1||microcracks:1||minor alloying:1||mixed potential:1||morphology:1||nanopowder:1||nanowire:1||nickel alloys:1||nickel iron alloy:1||nickel underbump metallurgy (UBM):1||nucleation:1||oxidation:1||peltier effect:1||phosphoric acid:1||pinhole:1||plasma:1||plastic deformation:1||polycrystalline ITO:1||polyimide:1||precipitation:1||pulse current plating:1||pulse reverse:1||recrystallization:1||roughness:1||saccharin:1||salt spray test:1||seebeck effect:1||silica:1||silver:1||size effects:1||solgel:1||solder resist:1||solidstate reaction:1||stability:1||succinic acid:1||surface cracks:1||surface defects:1||surface hardness:1||surface morphology:1||surfaceactive agent:1||system in package:1||tensile strength:1||thermoelectrics:1||through via:1||tin isopropoxide:1||tin oxide film:1||titania:1||transmission electron microscopy:1||triethanolamine:1||tungstate:1||tungsten:1||tungsten alloys:1||tungsten powder:1||ultrasonication:1||under bump metallization (UBM):1||undercut:1||wear:1||공과대학 교육목표:1||공침:1||교육환경:1||기본 자질교육:1||나노 결정체:1||능력 갖춘 인력배출:1||리더십:1||보머웨버:1||산화아연:1||수산화물:1||시분해 광발광:1||음이온교환수지:1||전기분해:1||진취성:1||bipyridyl:1||탄산염:1||2:1||2,2 &apos:1||2bipylidyl:1||AAO template:1||Air Agitation:1||Al Alloy:1||Al alloy:1||Alloy electroplating:1||Anion exchange resin:1||Annealing:1||Anodic TiO2 nanotubes:1||Anomalous codeposition:1||Antimony:1||Au/Cu Couple:1||Ball shear test:1||Bismuth:1||Black Pad:1||Butylamine:1||CGS:1||CIGS:1||CIGS thin films:1||CNT:1||Carbonate:1||Cation Exchange Membrane:1||Citric acid:1||CoCu alloy:1||Coating time:1||Codesposition:1||Complexing agents:1||Composite Plating:1||Conversion efficiency:1||Copper Electroplating:1||Copper Etching:1||Copper Nucleation:1||Copper electroplating:1||Copper etching:1||Copper filling electroplating:1||Copper plating:1||Copper via filling:1||Copperelectroplating:1||Coprecipitate:1||Coupled Corrosion Rate:1||Crystallinity:1||Cu via filling:1||Cu/Sn bump:1||CuCl2:1||Current efficiency:1||Current ratio:1||Current type:1||DSSC:1||Diamond:1||Dishing:1||Duty cycle:1||EDTA:1||Education objectives of the college of engineering:1||Education of the basic competence of engineers:1||Educational environments:1||Electroless:1||Electroless Copper Plating:1||Electroless Cu Plating:1||Electroless Cu/Sn bump:1||Electroless NiFe:1||Electroless Nickel Immersion Gold (ENIG):1||Electroless nickel plating:1||Electroless plating:1||Electrolysis:1||Electrolytic Etching:1||Electroplating, copper:1||Electropolishing:1||Electrowinning:1||Energy Dispersive XRay Spectrometer (EDX or EDS):1||Etch profile:1||Etching mechanism:1||EvaporationInduced SelfAssembly (EISA):1||FCCL:1||Fe–Ni invar alloy:1||FeNi alloy:1||FeCl3:1||Formic acid:1||Gadoped zinc oxide:1||Galvanic Corrosion:1||Galvanic corrosion:1||Galvanic corrosion potential:1||Gd2O3:1||Glue:1||Heat Treatment:1||High aspect ratio via:1||Hydroxide:1||ITO:1||Innovation:1||Invar:1||Invar alloy:1||Iron chloride:1||K2BaW2O8:1||Leadership:1||Limiting current density:1||Linear Sweeping Method:1||MCFC:1||MEMS Probe Card Tips:1||Magnesium Alloy:1||Magnetic property:1||Mesoporous:1||Metal Core PCB (MCPCB):1||Metal Turn Over (MTO):1||Mix surfactant:1||Nanocrystal:1||Nanorod:1||Nanowire:1||NiP Alloy:1||Ni/Cr Plating:1||NiCo Alloy:1||NiCo alloy:1||NiCo2O4 powders:1||NiP:1||Nickel Cobalt Oxide:1||Nickel sulfamate:1||Offshore Structure:1||Open Circuit Voltage (OCV):1||Optical materials:1||Oxide evolution reaction:1||Oxides:1||Oxygen Evolution:1||Oxygen Saturation:1||PCB:1||PEO:1||Palladium chloride:1||Particles:1||Pd Activation:1||

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