ScholarWorks@Hongik: Kim, Eu gene

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Kim, Eu gene (김유진)

Engineering (Applied Science)

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Atomic force microscopy:4||Electroluminescence:3||Organic thinfilm transistor:3||2006 10로 제 작 될 수 있 기 때 문 에 많 은 경 제 적 이 점 을 가 지 며 투 명:2||Hole transporting polymer:2||Low voltage:2||MEHPPV/DFPP blend:2||Number 5:2||October 206462 한국광학회지 제 권 제 호 년 월17 5:2||PDPMA:2||Photoluminescence quenching:2||Photovoltaic cell.†Email: byt427@kist.re.kr《연구논문》Hankook Kwanghak Hoeji:2||Polymer blend:2||Porous silicon:2||Small angle xray scattering:2||Solution process:2||Volume 17:2||fluorescent dyes:2||heat treatment:2||poly(methyl methacrylate):2||하거나 유연한 소자로:2||semitransparent NiO:1||semitransparent NiOx:1||Organic light emitting diode(OLED):1||6,13pentacenequinone film:1||semiconductor thin films:1||PL intensity:1||Pentacene:1||spectral overlap:1||stability:1||surface morphology:1||Polymer dielectric:1||Polymer lightemitting diode:1||tacticity:1||RNSS:1||SAN random copolymer:1||Signal processing:1||Signal quality monitoring:1||tetramethylbisphenolA polycarbonate:1||thermally evaporated:1||Stability:1||thin film transistors:1||ZnMgO:1||absorption:1||blend PnuT properties:1||bottomemitting organic lightemitting device (BEOLED):1||compatibility:1||double gate dielectric:1||electrical properties and measurements:1||electroluminescence:1||equation of state theories:1||field effect transistor:1||floatingoff film transfer:1||topemitting organic lightemitting device (TEOLED):1||gate insulator:1||guest emitting materials:1||wide band gap semiconductors:1||highk dielectric thin films:1||hole transporting layer:1||interaction parameter:1||lowk dielectric thin films:1||luminescence:1||monolayer:1||neutron reflectivity:1||organic field effect transistor:1||organic light emitting diode(OLED):1||pentacene thinfilm transistors:1||photoluminescence:1||zinc compounds:1||polymer blends:1||polymers:1||polystyrene:1||pressurevolumetemperature properties:1||random copolymer of the styrene and the acrylonitrile:1||Electrontransporting layer:1||Evilwaveform:1||F8BT:1||Fault detection:1||Flexible:1||Functional interface:1||Heat treatment:1||High mobility:1||Hole transporting layer:1||rectifying behavior:1||IIVI semiconductors:1||Langmuir monolayer:1||red light:1||Lowvoltage:1||MEHPPV:1||segment density profiling:1||Nanocrystal:1||

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94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1319

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