ScholarWorks@Hongik: Hwang, Jin ha

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Hwang, Jin ha (황진하)

Engineering (Advanced Materials)

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Impedance spectroscopy:13||Atomic layer deposition:8||Microstructure:6||Solid oxide fuel cells:6||impedance spectroscopy:5||ALD:5||Impedance Spectroscopy:4||Electrical properties:4||crystallization:3||Deep learning:3||Hydration:3||Raman spectroscopy:3||Electrical/dielectric properties:3||Design of experiments:3||Oxygen nonstoichiometry:2||Electrical/dielectric:2||SOFC:2||Oxygen vacancies:2||Molecular Electronics:2||AIC:2||Diffusion:2||Pb(ZrTi)O3:2||Indiumzinc oxides:2||Electrochemical polarization:2||Electrochemical properties:2||Annealing Temperature.:2||Silicon:2||Interfaces:2||Electrodes:2||currently. The LCDs have:2||deep learning:2||Electrolyte:2||Ion activation:2||Electron irradiation:2||CurrentVoltage characteristics:2||Polycrystalline:2||Sonochemical processing:2||Calcium Phosphate Bone Cements:2||Polycrystalline Si thin films:2||Neural Networks:2||Al2O3:2||solid oxide fuel cells:2||Stereology:2||Atomic Layer Deposition:2||Superelasticity:2||LangmuirBlodgett Method:2||Surface chemistry:2||Electrical Properties:2||graphene:2||Nickel oxide:2||Flash lamp annealing:2||Thermal warpage:2||Thin Film transistors1. IntroductionLiquid crystal displays (LCDs) possess the dominant position in flat panel technologies:2||hydrogel:2||MIC:2||Machine Learning:2||8223330127(Fax):2||Dielectric Properties:2||Transport properties:2||Electrical/Dielectric Properties.Corresponding author: jhwang@hongik.ac.kr8223203069(Tel) &:2||UV irradiation:2||Mercury:2||Electrical/Optical Properties:2||metalinduced:2||Microstructure features:2||Resistivity:2||Zinc oxide:2||Image analysis:2||Doublelayered dielectric structure:1||Dual cation precursor:1||Electrical Conductivity:1||Electrical resistance:1||Electrical resistivity:1||Electrical/Dielectric Properties:1||Electrochemical impedance spectroscopy:1||Electrochemical losses:1||Electrode configuration:1||Electrode polarization:1||Electron microscopy:1||Electronic materials:1||Electrosteric stabilization:1||Experimental Portland cement:1||Field effect transistor:1||Filaments:1||Flagshaped behavior:1||Flash lamp crystallization:1||Flatband voltage:1||Flexible display:1||Focused ion beam:1||Fuel cell material:1||Fuel cells:1||GDC electrolyte:1||GDC/LSCF cathode composites:1||GDC/NiO:1||GadoliniumDoped Ceria (GDC):1||Gas Discrimination:1||Gas response:1||Gas sensing:1||Gas sensing response:1||GdBaCo2O5+delta:1||Glass softening:1||Gold nanoparticle:1||Graphene:1||Graphite:1||Hall measurements:1||HfSiO:1||HfSiOx:1||Highk thin films:1||Hole degeneracy:1||Hybrid:1||Hybrid film:1||Hydrogen production:1||IGZO TFT:1||ITO:1||ITO cathode:1||Image:1||InGaZnO:1||InGaZnO:N:1||Indium tin oxide:1||Indium tin oxide (ITO):1||Inorganic electroluminescent displays:1||Insulating layers:1||Interconnectivity:1||Interface:1||Interfacial Layer:1||Interfacial Property:1||KMeans Clustering:1||KMeans clustering:1||LTPS:1||Ladoped BaTiO3:1||La2NiO4+delta:1||La2NiO4+delta/ Gd0.1Ce0.9O1.95 bilayer:1||LaAlO3/SrTiO3:1||Lanthanum nickelate:1||Largearea display:1||Layerbylayer:1||Loessbased materials:1||Machine learning:1||Mechanical properties:1||Mechanical strength:1||Membraneassisted water splitting for hydrogen production:1||MetalInduced Lateral Crystallization:1||Mixed conduction:1||Mixed conductor:1||Mixed ionicelectronic conducting perovskitetype oxide:1||Mixed ionicelectronic conductor:1||Mono and tricolored:1||Multilayer ceramic capacitor:1||Multilayered Oxide System:1||Multiple reflection:1||Nano Floating Gate Memories:1||Nanoelectronic devices:1||Nanofloating gate memories:1||Nanostructures:1||Nanocrystalline electrolytes:1||Nanocrystals:1||Nanodiodes:1||Nanomanipulators:1||Nanorods:1||Nanostructured materials:1||Nd:YAG laser:1||Neural networks:1||Ni metal foam:1||Ni(dmamb)(2):1||Nirich cathode:1||Nickel Oxides:1||Nickel bis(1dimethylamino2methyl2butanolate):1||NickelInduced Crystallization:1||Nitrogen incorporation:1||No Catalyst:1||Nonstoichiometric AlOx:1||Nonvolatile memory:1||Nonohmic Responses:1||Nucleation and growth:1||Numbers:1||Onestep wet chemistry:1||Optical transmittance:1||Ordinary portland cements:1||Organic thinfilm transistors:1||Oxide thin film transistor:1||Oxides:1||Oxygen electrode:1||Oxygen migration:1||Oxygen separation membrane:1||Oxygen vacancy:1||Oxynitride thin film transistors:1||P doping:1||PEALD:1||Permeation:1||Phasechange memory:1||Phasefield method:1||Phosphors:1||Photoconductivity and photovoltaics:1||Plasmaenhanced atomic layer deposition:1||Point Contact:1||Polarization:1||Poly(4styrenesulfonic acidcomaleic acid):1||Poly(acrylic acid):1||Poly(allylamine hydrochloride):1||Polycrystalline Si:1||Polyimide substrate:1||Polymer composite:1||Porphyrin:1||Precursor:1||Principal component analysis:1||ProRoot MTA:1||Proton Irradiation:1||PullOut:1||Pullout resistance:1||Quantum dot:1||Quantum dotlightemitting diode:1||RF magnetron sputtering:1||RF sputtering:1||RFsputtering:1||Raman Spectroscopy:1||Rapid setting/hardening:1||Rapid thermal annealing:1||ReRAM:1||Renewable energy materials:1||Residual lithium:1||Resistive Switching:1||Reversible solid oxide cells:1||Robustness:1||SERS:1||SMA Fibers:1||SMA fibers:1||SOFC anode composites:1||Scalable and continuous process:1||Scanning multishot FLA:1||SelfAssembly Monolayers (SAMs):1||Semantic segmentation:1||Semiconducting oxide gas sensors:1||Shape Memory Alloys:1||Shape of bathtub:1||Si TFT:1||SiO2:1||Silicon nitride:1||Single precursor:1||Sn(dmamp)(2):1||SnO2 sensors:1||Solar cell:1||Solid Oxide Fuel Cell (SOFC):1||Solid Oxide Fuel Cells:1||Solvent precipitation:1||Sonochemical synthesis:1||Spectroscopic ellipsometry:1||Sports analytics:1||Spreading ResistanceI. IntroductionThe concept of a hydrogen economy has ignited the advent of the electrochemical fuel cells which convert the chemical energy of fuels directly to electricit:1||Spreading resistance:1||Supercycle:1||Surface analysis:1||Surface area:1||Surface passivation:1||TFT Parameters:1||Thermal expansion mismatch:1||Thin film transistor:1||Thin film transistors:1||Thin films:1||Tin oxysulfide:1||Transition metal alloys and compounds:1||Transparent:1||Transparent electronics:1||Triple phase boundaries:1||UV illumination:1||Variability:1||WO3 sensors:1||Watersplitting:1||YAG laser:1||YttriaStabilized Zirconia (YSZ):1||ZnSnO:1||ZnO:1||ZnO nanocrystals:1||ZnO nanowires:1||ZnO thin films:1||agglomeration:1||amorphous Si:1||aqueous solution:1||atomic layer deposition:1||betaHydrogen elimination:1||carrier mobility:1||cathodes:1||cement:1||cementbased composites:1||cold drawing:1||complete electrode model:1||complex networks:1||complex oxide:1||crack monitoring:1||crackclosing capacity:1||dielectrics:1||digital processing:1||displacement recovery:1||electrical:1||electrical conductivity:1||electrical impedance tomography:1||electrode:1||electrode polarization:1||electrodes:1||energy storage system:1||enzyme:1||fiber pullout resistance:1||field effect transistor:1||finite element method:1||flagshaped behavior:1||gas sensing:1||geometric modification:1||glucose sensing:1||gold nanoparticle:1||hafnium 3methyl3pentoxide:1||hafnium dioxide:1||heterointerface:1||hybrid thin film:1||image:1||image analysis:1||image processing:1||insitu heating:1||indium tin oxide(ITO):1||interaction:1||interconnectivity:1||interface:1||inversion:1||layerbylayer:1||limitedcontact:1||line intercepts:1||luminescence:1||metal bilayer:1||microcontact:1||microcapsule:1||microdomain:1||microstructural factors:1||monodisperse:1||multimode sensing:1||nType Si:1||nanovoltatile memory:1||nickel oxide:1||nickel oxide and yttriastabilized zirconia composite:1||nonaqueous redox flow battery:1||nucletion:1||numbers:1||object detection:1||optical:1||organic electroluminescence(EL):1||pType semiconductor:1||pH sensing:1||passivation:1||phosphorescence lifetime:1||photonic crystals:1||polycrystalline Si.:1||prestressing:1||quantum dot:1||reinforced concrete:1||resistance switching:1||resistance switching phenomenon:1||resistive random access memory:1||selfhealing capacity:1||shape memory effect:1||shape memory materials:1||short SMA fibres:1||silica:1||single walled carbon nanotube:1||slag:1||smart materials:1||solid oxide fuel cell:1||spreading resistance:1||standard deviation:1||statistics:1||sulfur:1||superelastic SMA fibers:1||surface chemistry:1||surfaceenhanced Raman spectroscopy:1||thin films:1||transmission:1||transparent electrode:1||two dimensional electron gas:1||video processing:1||역해석:1||완전전극모델(CEM):1||유한요소법:1||전기 전도도:1||2DEG:1||전기임피던스 단층촬영 기법(EIT):1||3D printing:1||AR coating (antireflection coating):1||Activation:1||Activity coefficient:1||Aluminum oxides:1||Aminoalkoxide:1||Amorphous Si thin films:1||Amorphous oxide thin film transistors:1||Amorphous transparent oxide:1||Anchorage:1||Anodesupported cells:1||Artificial cathode electrolyte interface:1||Atomic layer:1||Atomic scale structure:1||Band gaps:1||Bond strength:1||Boron:1||Boron implantation:1||Breath sensors:1||Brightness:1||CMENZr:1||CMP slurry:1||CaO substitution:1||Catalytic Elements:1||Cathode composite materials:1||Cathodes:1||CeO2based electrolytes:1||Cementbased composites:1||Cerium oxide:1||Charge Trapping:1||Charge compensation:1||Chemical Hazards:1||Chemical Sensors:1||Complex networks:1||Composite cathodes:1||Conductivity:1||Conformality:1||Convolutional neural networks:1||Crack detection:1||Crosslinking:1||Crystallinity of LTPS:1||Crystallization:1||Cu2O thin films:1||CuO Nanowires:1||CuO thin films:1||CubicHfO2:1||DFT calculation:1||DOE:1||Data retention:1||Defect:1||Degradation:1||Density functional theory calculation:1||Densitycontrolled:1||Dental cement:1||Depletion:1||Depletion region:1||Deposition:1||Detection/discrimination:1||Device stability:1||Dielectric:1||Dielectric constant:1||Dielectrics:1||Digital Image Processing:1||Dimethylaluminum isopropoxide (DMAI):1||Diode:1||Direct Oxidation:1||Double perovskite:1||

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