ScholarWorks@Hongik: Yang, Hee sun

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Yang, Hee sun (양희선)

Graduate School (Department of Materials Science and Engineering)

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Quantum dots:10||quantum dots:8||quantum dot:6||InP quantum dots:6||electroluminescence:5||thermoelectric:5||Transparent:4||Color rendering index:4||Quantum dot:4||Lightemitting diodes:4||ZnO:4||Solvothermal:4||White lightemitting diode:3||White lightemitting diodes:3||White LED:3||Quantum Dots:3||lightemitting diodes:3||densityofstates effective mass:3||White light emitting diodes:3||electron transport layer:3||ZnO nanorods:2||luminescence:2||colorbyblue:2||quantum dot lightemitting diodes:2||quantum dotlightemitting diode:2||quantumdot lightemitting diodes:2||Atomic layer deposition:2||Device stability:2||ZnSeTe:2||ZnSeTe quantum dots:2||Power factor:2||secondary electron emission:2||selfemitting:2||Single Parabolic Band model:2||Core/shell:2||#8208:2||Fluorescent stability:2||QLEDs:2||single parabolic band model:2||dielectric constant:2||Nanocrystalline Y3Al5O12:Ce:2||double shelling:2||bipolar thermal conductivity:2||Photoluminescence:2||Quantum yield:2||Formic acid:2||perovskite:2||Nanocrystals:2||Nanophosphors:2||lattice thermal conductivity:2||Highefficiency:2||CuInS2/ZnS quantum dots:2||Seebeck coefficient:2||charge transfer:2||Mn doping:2||Cudeficient:1||Cudoped:1||Cu/In molar ratio:1||CuInS2 (CIS) IIIIVI:1||CuInS2/ZanS:1||CuInS2/ZnS:1||CuInS2/ZnS QD:1||Culns2/ZnS quantum dot:1||D5(j)/D5(0):1||Data retention:1||Deepblue ZnSeTe quantum dots:1||Densitycontrolled:1||EDTA:1||Emissiontunable:1||Energy transfer:1||Etch profile:1||Etching mechanism:1||Eu2+ emission:1||FDTD:1||FeSe2FeTe2:1||Flatband voltage:1||Fluorescent:1||Fluorescent attributes:1||Ftlab America:1||Functional interface:1||Ga treatment:1||Gadoped ZnO:1||Gadoped zinc oxide:1||Gd2O3:1||Greener phosphorus source:1||Growth density:1||Gyeonggido:1||Halide perovskite:1||Hall carrier concentration:1||Hall factor:1||Heterostructural tailoring:1||Hfdoping:1||Highcolor purity:1||Hightemperature zT:1||Hotinjection:1||Hybrid:1||Hydrothermal:1||I−III−VI:1||IGZO TFT:1||IIVI semiconductors:1||ITO cathode:1||In2O3 overcoating:1||InP:1||InP QDs:1||InP/ZnS:1||InP/ZnS core/shell:1||InP/ZnS quantum dots:1||KMeans Clustering:1||KCa2Nb3O10:1||Korea:1||LSPR:1||Liion battery:1||LiSrPO4:Eu phosphor:1||Ln(2)O(2)S : Eu3+:1||Lorenz number:1||Luminescent properties:1||Machine Learning:1||MgO:1||Microemulsion:1||Mono and tricolored:1||Monodisperse:1||Nanofloating gate memories:1||Nanoseeds:1||Nanocrystal:1||Nanocrystalline:1||Nanocrystalline electrolytes:1||Nanorods:1||Nanowires:1||Neural Networks:1||NonCd:1||NonCd quantum dots:1||Nonparabolicity factor:1||Nontoxic:1||Nucleation and growth:1||Oleylamine:1||Operational stability:1||Optical device fabrication:1||Organic lightemitting diode:1||Organic photovoltaic cells:1||Oxalic:1||P3HT:PCBM:1||PDP:1||PL QY:1||Passivation:1||PbSe:1||Phasechange memory:1||Phasefield method:1||Phosphors:1||Phosphorus source:1||Photoetching:1||Photoradiation:1||Photostability:1||Phototransistor:1||Pisarenko plot:1||Plasma display:1||Plasma display panels:1||Plasmaenhanced atomic layer deposition:1||Plate:1||Polymer:1||Polymer composite:1||Polymer film:1||QDLEDs:1||QDemissive LCD:1||QDlightemitting diode:1||Quantum dot lightemitting diodes:1||Quantum dotlightemitting diode:1||Rare earth doped:1||Recombination pathway:1||Redemitting:1||Redemitting Gd2(MoO4)(3):Eu phosphor:1||Resistivity:1||Reverse micelle:1||Selfassembled nanoparticles:1||Selfemitting:1||SiO2:1||Silica:1||Silicaembedded:1||Silicate:1||SnO2:1||SnSe:1||SnTe:1||Solid oxide fuel cells:1||Solutionprocessing:1||Sonochemical processing:1||Spectral broadening:1||Spectral variations:1||Spectroscopic ellipsometry:1||Spraytype encapsulation:1||Sr3B2O6:Eu2+:1||Substrate temperature:1||Surface passivation:1||TFT Parameters:1||Ternary:1||Thermoelectric:1||Thick ZnS shell:1||ThinFilmTransistor:1||Thinfilmtransistor:1||Titanium isopropoxide:1||Transistors:1||Transparent display device:1||Transparent electrode:1||Transparent electronics:1||Transparent plasma display panel:1||Tricolored:1||Tris(dimethylamino)phosphine:1||Tunability:1||Tunable Emissions:1||UV illumination:1||UV polymer:1||Variability:1||Visible Emitters:1||Visible transmittance:1||Water repellency:1||Wet etching:1||White LightEmitting Diode:1||White LightEmitting Diodes:1||White QDLEDs:1||White electroluminescence:1||White lightemitting device:1||White lighting:1||White luminescence:1||WhiteLightEmitting Diode:1||Y(V,P)O4:1||Y(V,P)O4:Eu nanophosphors:1||Y(V0.5,P0.5)O4:Eu:1||YAG : Ce:1||YAG:Ce:1||YAG:Ce Nanophosphor:1||YVO4 nanocrystalline:1||YbCd2Sb2:1||Yellow emission:1||Yellowemitting:1||Zinc oxide:1||ZnCuGaS quantum dots:1||Zn1xCdxS:1||Zn2+ ions:1||Zn?Cu?Ga?Se1?xSx quantum dots:1||ZnCdS/ZnS:1||ZnCdSe/ZnS:1||ZnGa2O4 shell:1||ZnGa2O4:Eu3+:1||ZnInS:1||ZnMgO:1||ZnO Film:1||ZnO nanocrystals:1||ZnO nanodot:1||ZnO quantum dots:1||ZnS double shell:1||ZnSe:1||ZnSe inner shell:1||ZnxCd1xSe:1||acPDPs:1||activematrix:1||allsolutionprocessed:1||alloyed ZnSeTe quantum dots:1||aminophosphine precursor:1||angleindependent:1||aqueous solution:1||areal density:1||artificial cilia:1||auger recombination:1||benzenethiol:1||blue common layer:1||blue light leakage:1||blue quantum dot:1||blue shifts:1||callaway von bayer model:1||capacity loss:1||carbon nanotubes:1||carrier concentrations:1||cathodoluminescent:1||cesium lead halide:1||charge balance:1||charge separation:1||chiralinduced spin selectivity:1||cobalt oxide:1||color:1||color gamut:1||composite film:1||compositionaltuning:1||concentration:1||confinement potential smoothing:1||conversion reaction:1||copper gallium:1||copper indium sulfide:1||core–shell:1||core/shell/shell:1||crack monitoring:1||current density:1||current efficiency:1||defect passivation:1||discharge voltage:1||display:1||display materials:1||doping:1||down converted LED:1||down converters:1||downconversion:1||effective mass:1||efficiency:1||electroluminescent:1||electron traps:1||emission enhancement:1||emission quenching:1||emissive InP quantum dots:1||energy transfer:1||etching:1||exciton quenching:1||exoelectron:1||external quantum efficiency:1||fiber pullout resistance:1||field effect spinning:1||field effect transistor:1||fieldeffect mobility:1||fieldeffect transistor:1||fieldsequentialcolor LCD backlight:1||flexible device:1||floral design:1||fullcolor:1||fullcolor display:1||fullcolor electroluminescence:1||gallium:1||gallium nitride:1||geometric modification:1||glow discharge:1||glow discharges:1||gold nanoparticles:1||gradient shell:1||graphene:1||green lasing:1||green&:1||high color performance LED:1||highcolor stability:1||highefficiency:1||hole injection layer:1||hybrid:1||hydrogels:1||hydrophilic:1||hydrophobic:1||hydrothermal synthesis:1||impedance spectroscopy:1||insulating thin films:1||interlayer:1||inverted architecture:1||layered perovskite:1||lifetime blinking:1||light extraction:1||lightemitting device:1||lightemitting diode:1||lightrecycling filter:1||localized states:1||localized surface plasmonresonance:1||longwavelength dichroic filter:1||luminescent quenching:1||luminescent solar concentrator:1||magnesium compounds:1||metal oxides:1||microstructure:1||multilayer ceramic capacitor:1||multilayer ceramic capacitor:1||nanocrystal:1||nanocrystalline:1||nanocrystals:1||nanoparticle:1||nanoparticles:1||nanophosphors:1||natureinspired technology:1||near infrared:1||near&:1||nonCd blue emitters:1||nonCd quantum dots:1||nondegenerate mobility:1||optical metasurfaces:1||organic compounds:1||organic light emitting diodes:1||organic lightemitting diode:1||organic lightemitting diodes:1||oxygen vacancy:1||partial ligand exchange:1||particle size distribution:1||perovskite quantum dot:1||phosphorus precursor:1||photocatalytic:1||photodetector:1||photoelectric characteristic:1||photoluminescence:1||photoluminescent:1||photophysical mechanism:1||photovoltaic:1||plasma display:1||plasma display panel:1||plasmonic:1||plexciton:1||polariton:1||polysilazane protection:1||postannealing:1||printing:1||quantum dot films:1||quantum dot lightemitting diode:1||quantumdot lightemitting diode (QLEDs):1||quaternary alloy quantum dots:1||rapidthermal annealing:1||rare earth:1||reactivity:1||red emissivity:1||reduced process step:1||remote phosphor:1||semiconductor doping:1||semiconductor thin films:1||shape memory materials:1||sharp line width:1||silicon nitride passivation:1||silicon oxide encapsulation:1||singlepackage white LED:1||singlephased quantum dots:1||size fractionation:1||skewness:1||smart materials:1||spinLEDs:1||sputter deposition:1||stability:1||statistical delay:1||stimulated emission:1||structural coloration:1||subwavelength scattering:1||sulfide:1||surface plasmons:1||ternary ZnCdse:1||thermal quenching:1||thermal stability:1||thin film transistors:1||topemission:1||transition metal dichalcogenides:1||transition metal ions:1||transmittance:1||transparent electrode:1||tunability:1||tunable emission:1||twoband model:1||twostep calcination:1||ultraviolet detectors:1||unity quantum yield:1||vanadium dioxide:1||vertically grown fiber:1||visible transparency:1||wall charge:1||weighted mobility:1||wetting:1||white LED:1||white LEDs:1||white emission:1||white lighting:1||white lighting devices:1||white photoluminescence:1||wide band gap semiconductors:1||work function:1||zinc compounds:1||zintl phase:1||zirconium propoxide:1||디스프레이:1||색채:1||플라워디자인:1||Agbased IIIIVI:1||AgInS:1||Aldoped shell:1||Alloy Quantum Dots:1||Amorphous oxide thin film transistors:1||Au nanocrystals:1||AuAg alloy NPs:1||AuAg nanoparticles:1||Auger recombination:1||Ba2Si3O8:Eu2+:1||BaTiO3:1||Baking Temperature:1||Band gaps:1||Band mass of a single Fermi pocket:1||Bi2Te3:1||Bicolored:1||Blue CdZnS/ZnS:1||Blue nanophosphors:1||Bluetoyellow color converters:1||Bluish green:1||Borate:1||Borosilicate:1||Carrier concentration:1||Cd rich:1||Cdfree quantum dots:1||CdS:1||CdS nanorods:1||CdS:Mn/ZnS:1||CdS:Mn/ZnS quantum dots:1||Cerium oxide:1||Channel mobility:1||Chemical Bath Deposition:1||Chemical bath deposition:1||Citric:1||Citric acid:1||Colloidal nanocrystals:1||Color gamut:1||Color purity:1||Color rendering:1||Color rendering indices:1||ColorRendering Property:1||Complexing:1||Complexing agent:1||Conductivity effective mass:1||Constant Precursor Ratio:1||Controlledshape:1||Copper indium sulfide:1||Coreshell structure:1||Core/shell heterostructure:1||Crystallinity:1||CsPbBr3:1||Cu doping:1||CuInS/ZnS quantum dot:1||CuInZnS quantum dot:1||

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94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314

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