ScholarWorks@Hongik: Kim, Hyung tak

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Kim, Hyung tak (김형탁)

Engineering (Electronic & Electrical Engineering)

Research Area: 반도체소자 및 공정

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gallium nitride:9||GaN:8||AlGaN/GaN:7||Reliability:7||SiO2:5||reliability:5||Raman thermometry:4||selfheating:4||Degradation:4||high electron mobility transistor:4||DC stress:4||HFET:4||Normallyoff:4||AlGaN/GaN heterojunction:4||thermoreflectance thermal imaging:3||displacement damage:3||IIIV semiconductors:3||AlGaN/GaNonSi:3||AlGaNGaN:3||hydrogen:3||wide band gap semiconductors:3||Gallium nitride(GaN):3||HEMT:3||power consumption:3||simulation:3||gallium compounds:3||hydrogen sensor:3||HEMTs:3||AlGaN:3||proton irradiation:3||heterostructure:3||aluminium compounds:3||high electron mobility transistor (HEMT):3||thermal management:3||high electron mobility transistors:3||degradation:2||thermal dynamics:2||inverse piezoelectric effect:2||thermoreflectance imaging:2||trap:2||Palladium:2||electron trapping:2||electrothermal effects:2||Gallium nitride:2||monolithic integration:2||wide bandgap (WBG):2||Gallium nitride (GaN):2||nitrogen dioxide sensor:2||normallyoff:2||H2:2||field plate:2||MISHFET:2||Proton irradiation:2||Heterostructure:2||Flatband voltage:2||palladium catalyst:2||gallium nitride (GaN):2||gas sensors:2||UV detection:2||platinum:2||AlGaN/GaN HFET:2||High temperature:2||power electronics:2||High voltage:2||Widebandgap semiconductor:2||IIIV semiconductor materials:2||high voltage:2||security:2||block cipher:2||semiconductor heterojunctions:2||AlGaN/GaN MOSHFETs:2||AlGaN/GaN heterostructure:2||Internet of things:2||stability:2||Sensitivity:2||cryptography:2||Inverse piezoelectric effect:2||infrared imaging:2||instability:2||PECVD:2||temperature measurement:2||Nanomembrane transfer:1||Nanoparticle:1||Negative differential resistance:1||Nitride semiconductor:1||Normally off:1||OFETs:1||OTFT:1||Ohmic contacts:1||Optoelectronic oscillator:1||Oxygen plasma:1||Passivation:1||Pd:1||Pd Catalyst:1||Pd catalyst:1||Pdfunctionalised heterostructure:1||Photocatalyst:1||Plasmaenhanced chemical vapor deposition:1||Postmetallization annealing:1||Power:1||Power electronics:1||Power semiconductor:1||Pt catalyst:1||PtGaN:1||Radiation hardness:1||Raman scattering:1||Recess:1||Recessedgate:1||Rutile:1||Schottky barrier diode:1||Schottky barriers:1||Schottky contact:1||Schottky contact.:1||Schottky diodes:1||Schottky pGaN gate:1||Schottkydiodetype hydrogen sensor:1||Selfheating:1||Semiconductor laser:1||Si:1||SiC:1||Silicon nitride:1||SnO2:1||Spiking neural network:1||Spurious tone:1||Stability:1||Stochastic Computing:1||Stochastic computing:1||Stress tests:1||Subthreshold:1||Surface potential:1||TDDB:1||Thermal:1||Thermal dynamics:1||Timedependent dielectric breakdown (TDDB):1||Trap generation:1||Trap.:1||Tunnel junction diode:1||Tunneling field effect transistor:1||Ultrathin AlGaN barrier:1||Unipolar Adder:1||Unipolar adder:1||VTH instability:1||Vacuum:1||Wide bandgap(WBG):1||atomic layer deposition:1||avalanche photodiode:1||barrier layer:1||catalysis:1||catalysts:1||charge trapping:1||constant current bias mode:1||conversion efficiency:1||current mode operation:1||defects:1||density of states (DOS):1||dualloop configuration:1||dynamic characteristics:1||electron density:1||embedment:1||enhancement mode:1||enhancementmode:1||extreme temperature:1||ferroelectric:1||field effect transistors:1||flatband voltage:1||fluorine:1||forward gate voltage stress:1||freewheeling diode:1||frequency:1||frequency multiplier:1||frequencydependent CV:1||full subband gap:1||gas sensor:1||gate bias modulation:1||gate recess process:1||gaterecess:1||gaterecessed:1||graded doping:1||harsh environment:1||heterojunction:1||heterojunction fieldeffect transistor:1||heterostructure FETs:1||high sensitivity:1||high temperature:1||hole:1||hydrogen concentration:1||hydrogen gas sensitivity:1||hydrogen gas sensor:1||hydrogen gas sensors:1||hydrogen sensing:1||in situ SiN:1||inductively coupled plasma chemical vapor deposition (ICPCVD):1||inductivelycoupled plasma etching:1||interface trap:1||interface trap density:1||irradiation:1||loop gain:1||lowpower consumption:1||metalferroelectricmetal:1||metaloxidesemiconductor heterojunction fieldeffect transistor:1||metaloxidesemiconductor heterostructure:1||metaloxidesemiconductor heterostructure fieldeffect transistor (MOSHFET):1||mobility extraction:1||multiplying DLL:1||negative gate bias:1||nitrogen dioxide gas sensor:1||nonvolatile memory operation:1||normallyoff MOS heterostructure field effect transistor:1||normallyon:1||optical interference:1||optimum bias voltage:1||optoelectronic oscillator:1||optoelectronic oscillators:1||oxygen plasma:1||pAlGaN:1||pAlGaNgate:1||pGaN:1||pGaN gate:1||palladium:1||parasitic resistance:1||passivation:1||phase noise:1||plasmaenhanced atomic layer deposition:1||positive gate bias:1||power device:1||power devices:1||power semiconductor:1||power semiconductor devices:1||programerase operation:1||proton:1||pulsed characteristics:1||radiation:1||randomaccess storage:1||reaction temperature:1||recess channel transistor:1||recessedgate:1||response:1||reverse bias mode:1||selective etching:1||selectivity:1||semiconductor device models:1||short channel effect:1||silicon carbide:1||size 2 nm:1||spurious modes:1||steadystate thermoreflectance:1||stress:1||synchronous buck converter:1||technology CAD (electronics):1||temperature:1||temperature 200:1||temperature 200 degC:1||temperaturedependence:1||thermal reliability:1||thinAlGaN:1||thinfilm transistors (TFTs):1||tungsten trioxide:1||twoterminal HEMT:1||twoterminal currents:1||undoped HfO2:1||voltage 0:1||voltage 3:1||white organic lightemitting diodes:1||(110)Si:1||yellow fluorescent dopant:1||0 degC:1||1 V:1||1/f noise:1||2DEG:1||4HSiC:1||6 V:1||AIGaN/GaN Heterojunction:1||APD:1||AlGaN/GaN HEMT:1||AlGaN/GaN HEMTs:1||AlGaN/GaN HFETs:1||AlGaN/GaNonSi HFET:1||AlN:1||Alphaparticle:1||Ambient:1||Amorphous InGaZnO (aIGZO):1||Anatase:1||Approximate Computing:1||Approximate computing:1||Atomic layer deposition (ALD):1||Aufree process:1||BCAM:1||BDATP:1||Backpropagation:1||Biasstress test:1||Binary CAM:1||Breakdown:1||CAM:1||CMOS:1||Channel temperature:1||Charge density:1||Charge recombination:1||Content Addressable Memory (CAM):1||Cryogenic:1||Cryogenics:1||DLL:1||Deepultraviolet:1||Differential ideality factor:1||Direct modulation:1||Doublelayered passivation:1||Dualloop:1||Electron trapping:1||Electron traps:1||Extreme environment:1||FET:1||Field plate:1||Fieldplate:1||Frequency response:1||GaAs:1||GaN FETtype sensors:1||GaN heterojunction gas sensors:1||GaN heterojunction platform:1||GaNcap layer:1||GaNonSi:1||Gate lag:1||Geiger mode:1||Heterostructure FET:1||Hetrostructure:1||High electron mobility transistor (HEMT):1||Hot Carrier Effect:1||Hydrogen sensing:1||In situ SiN:1||Insitu SiN:1||Interface trap:1||LIF neuron:1||Low Power:1||LowPower Consumption:1||Lowtemperature:1||LowerPartOR:1||LowerpartOR:1||MDLL:1||MESFET:1||MOS interface:1||MOSFET:1||Metaloxidesemiconductor heterojunction fieldeffect transistor:1||Mo/Au gate:1||Mobility:1||Molybdenum:1||Multielectrode laser:1||NO2:1||

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