ScholarWorks@Hongik: Cha, Ho Young

Detailed Information

Cha, Ho Young (차호영)

Engineering (Electronic & Electrical Engineering)

Research Area: 반도체

Tel
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

GaN:21||AlGaN:12||AlGaN/GaN heterojunction:8||gallium nitride:7||AlGaN/GaN:7||SiO2:7||normallyoff:7||silicon carbide:6||breakdown voltage:6||HFET:5||AlGaN/GaNonSi:5||avalanche photodiode:4||Field plate:4||high electron mobility transistor:4||high electron mobility transistors:4||Reliability:4||Normallyoff:4||hydrogen sensor:4||field plate:4||DC stress:4||power consumption:3||AlGaN/GaN heterostructure:3||reliability:3||AlGaN/GaN MOSHFETs:3||aluminium compounds:3||PECVD:3||Avalanche photodiode:3||heterostructure:3||AlGaNGaN:3||gallium compounds:3||ferroelectric:2||sensitivity:2||FET:2||silicon nitride:2||Graphene:2||metalinsulatorsemiconductor structures:2||stability:2||H2:2||AlGaN/GaNonSi HEMT:2||aluminum oxynitride:2||Schottky barrier diode:2||Internet of things:2||monolithic integration:2||Schottky contact:2||gas sensors:2||Inverse piezoelectric effect:2||trap:2||gate leakage current:2||gate recess:2||ultraviolet:2||Flatband voltage:2||oxygen plasma:2||pGaN:2||pGaN gate:2||MESFET:2||wide band gap semiconductors:2||block cipher:2||Pd:2||piezoresistive coefficients:2||plasma enhanced atomic layer deposition (PEALD):2||metaloxidesemiconductorheterojunction fieldeffect transistor:2||Pd catalyst:2||high voltage:2||post metallization annealing:2||Breakdown voltage:2||Silicon carbide:2||CVD:2||hydrogen:2||power devices:2||cryptography:2||Silicon nitride:2||AlN:2||defects:2||deltadoped betaGa2O3 heterostructures:2||HfO2:2||EBIC:2||4HSiC:2||Atomic layer deposition:2||interface trap density:2||High voltage:2||inverse piezoelectric effect:2||MOSHFET:2||Gallium nitride:2||security:2||electron trapping:2||UV detection:2||IIIV semiconductors:2||Mobility:2||RFsputtering:2||semiconductor heterojunctions:2||IIIV MOSFET:1||IPA oxidant:1||In situ SiN:1||InGaAs MOS:1||Indium gallium arsenide (InGaAs):1||Interface trap:1||Interface trap density:1||Interfacial trap:1||Johnson&apos:1||Kaband:1||Lightemitting device:1||LowPower Consumption:1||MFM capacitor:1||MIS capacitor:1||MISHEMTs:1||MISHFET:1||MMIC:1||MODFET:1||MOS:1||MOS HEMT:1||MOS interface:1||MOSHFET:1||MOSFET:1||Meandering pattern:1||Microwave performance:1||Mixedsource HVPE:1||Mo/Au gate:1||MoS2 FETs:1||Molybdenum:1||NCFET:1||Nanoparticle synthesis:1||Negative capacitance:1||Neural Processors:1||Nitride semiconductor:1||Ohmic contacts:1||Organic dielectric sheet:1||Oxygen plasma:1||PAE:1||PBTI reliability:1||PEALD:1||Palladium:1||Passivation:1||Pd Catalyst:1||Pdfunctionalised heterostructure:1||Photodiode:1||Photoluminescence:1||Photosensitive inverters:1||Phototransistor:1||Picoefficients:1||Plasmaenhanced chemical vapor deposition:1||Poisson&apos:1||Postannealing:1||Postmetallization annealing:1||Pressure coefficients:1||Pt catalyst:1||PtGaN:1||Pulsed IV:1||Quartz:1||Quasidirect bandgap Si:1||RF sputter:1||Raman:1||Recess:1||Recessed gate:1||Recessedgate:1||Resonance excitation:1||Response:1||Schottky Barrier Diode (SBD):1||Schottky barrier diode (SBD):1||Schottky barriers:1||Schottky diodes:1||Schottkydiodetype hydrogen sensor:1||Selective etching:1||Semiconductor stresssensor:1||Sensitivity:1||Shearstress:1||Si allotrope:1||Si micro single crystal:1||SiC:1||SiN(x)passivation:1||SiOxNy:1||Silicon dioxide:1||SnO2 Nanoparticle:1||Solarblind UV optical communication:1||Solid capacitor:1||Stiffness coefficients:1||Strain effects:1||Stress sensor:1||Subthreshold slope:1||System on a Chip:1||TDDB:1||ThinAlGaN/GaN:1||Trap.:1||UV:1||Ultra Violet:1||Ultrathin AlGaN barrier:1||VDP (van der Pauw) strain effects (111) silicon stress sensors:1||Widebandgap semiconductor:1||Xband:1||Xray photoelectron spectroscopy:1||ZnO gate dielectric:1||ZnO nanodot:1||ZnO nanoparticle:1||ZnOnanoparticles:1||absorption coefficient:1||aluminium nitride:1||amplifier:1||analytic model:1||atomic layer deposition:1||atomic layer etching:1||avalanche multiplication:1||avalanche photodiodes (APDs):1||backlight unit:1||beta2DEG:1||betaGa2O3:1||bevel:1||biosensors:1||buried gate:1||catalysis:1||catalysts:1||catalyticCVD:1||compliance coefficients:1||constant current bias mode:1||conversion efficiency:1||current collapse:1||current mode operation:1||deltadoped βGa2O3 heterostructures:1||diode bridge:1||displacement damage:1||doubleheterostructure highelectron mobility transistor:1||dual MIS:1||dynamic characteristics:1||edge termination:1||effective border trap:1||electric field:1||electroluminescence:1||electron density:1||embedment:1||enhancement mode:1||enhancementmode:1||extreme temperature:1||failure analysis:1||ferroelectric material:1||field effect transistors:1||fieldeffect transistor:1||filterfree:1||flatband voltage:1||floating metal:1||fluorine:1||forming gas annealing:1||freewheeling diode:1||frequency:1||frequencydependent CV:1||frequencydependent capacitance:1||gain:1||gallium oxide:1||gate driver:1||gaterecess:1||gaterecessed:1||gated ohmic anode:1||guard ring:1||hafnium oxide:1||hafnium oxynitride (HfOxNy):1||harsh environment:1||heterojunction fieldeffect transistor:1||heterostructure FETs:1||high K:1||high sensitivity:1||high temperature:1||high voltage switching device:1||highk:1||highk gate dielectric:1||highk material:1||hydrogen concentration:1||hydrogen gas sensitivity:1||hydrogen gas sensor:1||hydrogen gas sensors:1||hydrogen sensing:1||impact ionization:1||in situ SiN:1||inductively coupled plasma chemical vapor deposition (ICPCVD):1||instability:1||interface trap:1||interface trap states:1||interfacial layer:1||inversion:1||invertors:1||ionization coefficients:1||junction temperature:1||laser scanning confocal microscopy:1||leakage current:1||light emitting diode:1||lightshield layers (LSLs):1||local model:1||low damage etching:1||low noise margin:1||lowfrequency noise:1||lowpower consumption:1||metal insulator semiconductor high electron mobility transistors (MISHEMTs):1||metalferroelectricmetal:1||metalinsulatorsemiconductor:1||metalinsulatorsemiconductor high electron mobility transistors:1||metalorganic chemical vapor deposition:1||metaloxidesemiconductor heterojunction fieldeffect transistor:1||metaloxidesemiconductor heterojunction fieldeffect transistor (MOSHFET):1||metaloxidesemiconductor heterostructure fieldeffect transistor (MOSHFET):1||metaloxidesemiconductor heterostructure fieldeffecttransistor (MOSHFET):1||mobility extraction:1||modeling:1||modulationdoped fieldeffect transistors (MODFETs):1||molecular beam epitaxy:1||monolithically integrated singlestage inverter:1||nitridation:1||nitride device:1||nitrogen dioxide sensor:1||normallyoff MOSHFET:1||normallyon:1||ohmic:1||optimum bias voltage:1||oxygen atmosphere:1||palladium:1||palladium catalyst:1||parasitic resistance:1||phototransistor:1||photocatalyst:1||photodetector:1||photodiode:1||photoresponsivity:1||piezoresistive coefficients:1||plasma enhanced atomic layer deposition:1||plasma enhanced chemical vapor deposition (PECVD):1||plasmaenhanced atomic layer deposition:1||platinum:1||polarization:1||postmetallizationannealing:1||power amplifier:1||power density:1||power device:1||power diode:1||power semiconductor:1||power transistor:1||proton irradiation:1||pulsed characteristics:1||radiofrequency device:1||reaction temperature:1||recessedgate:1||rectifier:1||rectifying electrode:1||resistive load:1||resistor sensor:1||resistorsensor:1||response:1||reverse bias mode:1||s figure of merit (JFOM):1||s ratio:1||sacrificial oxide:1||schottky barrier diode:1||selective etching:1||selective plasma etching:1||selectivity:1||selfheating:1||semiconductor defects:1||semiconductor device models:1||semiconductorsensor:1||sensorsensitivity:1||separate absorption multiplication (SAM):1||shearstress:1||silicon oxynitride:1||silicon oxynitride (SiON):1||singlecrystal:1||singlestage inverter:1||stress sensor strain effects:1||stress sensors:1||stresssensor:1||synchronous buck converter:1||technology CAD (electronics):1||temperature:1||temperature 200:1||temperature 200 degC:1||temperaturedependence:1||thermal effects:1||thermal reliability:1||thinAlGaN:1||threshold voltage instability:1||threshold voltage stability:1||titanium disilicide/Cu:1||trench field plate:1||tungsten trioxide:1||turnon voltage:1||twoterminal HEMT:1||ultraviolet (UV):1||ultraviolet (UV) detector:1||ultraviolet detection:1||ultraviolet detectors:1||undoped HfO2:1||unidirectional operation:1||variable capacitor:1||vertical diode:1||voltage 0:1||βGa2O3:1||광다이오드:1||반사방지구조:1||분극:1||비가시광 UV 광통신:1||상시불통:1||전계효과 트랜지스터:1||(001) silicon:1||질화알루미늄갈륨:1||(111) silicon:1||(MISHEMTs):1||:1||0 degC:1||1 V:1||2D:1||2D electron gas (2DEG):1||2DEG:1||2HSi:1||AI Processors:1||AIGaN/GaN Heterojunction:1||ALD:1||ALDAlN:1||APD:1||AlGaN/GaN HEMT:1||AlGaN/GaN HEMTs:1||AlGaN/GaN HFETs:1||AlGaN/GaN Heterojunction:1||AlGaN/GaN MOSHEMT:1||AlGaN/GaN heterojunction fieldeffect transistor:1||AlGaN/GaNonSi HFET:1||AlHfON:1||Antireflective structure:1||Array:1||Aufree:1||Aufree process:1||Avalanche photodiodes:1||Avalanche photodiodes (APDs):1||Beryllium oxide:1||Bidirectional switch:1||Biosensors:1||Capacitancevoltage:1||Carbondoped buffer:1||Cell Detection:1||Channel temperature:1||Charge density:1||Clamp circuit:1||Cryogenics:1||Cu electrode:1||Cu sheet:1||Cubic Si:1||Currentboosting:1||Defects:1||Degradation:1||Domain matching epitaxy:1||Donor:1||Dual gate insulator:1||Edge breakdown:1||Edgetermination:1||Electrical properties:1||Electroluminescence:1||Electron trapping:1||Enhancementmode:1||Ferroelectric:1||Fin FET:1||Fingate:1||Ga2O3:1||GaN FETtype sensors:1||GaN FETs:1||GaN heterojunction gas sensors:1||GaN heterojunction platform:1||GaNcap layer:1||GaNonSi:1||GaNonSi(110):1||GaNonSiC:1||Gallium Nitride:1||Gallium Nitride.:1||Gallium nitride (GaN):1||Gallium oxide:1||Gallium oxide(Ga2O3):1||Gated ohmic anode diode:1||Geiger mode:1||HEMT:1||HEMTs:1||HVPE:1||Hafnium oxide:1||Hafnium oxintride:1||Heterojunction PN diode:1||Heterostructure:1||Heterostructure FET:1||Hetrostructure:1||Hexagonal lonsdaleite silicon:1||High permittivity:1||High resolution patterning:1||High temperature:1||Hot Carrier Effect:1||Hot probe measurement:1||Hydrogen:1||Hydrogen sensor:1||

STATISTICS: Total View :2,137,783; Today View :96

RSS_1.0 RSS_2.0 ATOM_1.0

94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE