ScholarWorks@Hongik: Cho, Chun Hyung

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Cho, Chun Hyung (조준형)

Science & Technology (Department of Electronic & Electrical Convergence Engineering)

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AlGaN/GaN:3||(111) silicon:2||Schottky barrier diode:2||sensorconditioning:2||breakdown voltage:2||Electroabsorption modulator:2||silicon carbide:2||field plate:2||PECVD:2||반도체 레이저:2||Semiconductor lasers:2||Stress sensor:2||stresssensor:2||piezoresistive coefficients:2||sensitivity:2||Pressuresensor:2||Distributed feedback laser diode:1||Epoxy:1||Extinction ratio:1||Field plate:1||Gallium nitride (GaN):1||Gallium oxide:1||Grating couplers:1||Heterostructure FET:1||High permittivity:1||Hydroxyapatite:1||Injection parameters:1||MESFET:1||Meandering pattern:1||Microwave photonics:1||Mo/Au gate:1||Montmorillonite:1||MultiLoop Configuration:1||Multiresonance effects:1||Nanocomposite:1||Noise figure:1||Noise floor:1||Normallyoff:1||Ohmic contacts:1||Open loop response:1||Optical communication:1||Optical complex signal generation:1||Optical injection lock:1||Optical interconnects:1||Optical repeater:1||Optical transceiver:1||Optoelectronic Oscillator:1||Optoelectronic oscillator:1||Peak power protection:1||Picoefficients:1||Picoefficients versus temperature:1||Piezoresistance:1||Piezoresistive coefficients:1||Poisson&apos:1||Power amplifier:1||Pressure coefficients:1||Recessedgate:1||Schottky gate:1||Selfpulsation:1||Semiconductor laser:1||Semiconductor pressuresensor:1||Semiconductor sensor:1||Semiconductor stresssensor:1||Shearstress:1||SiO2:1||Silicon dioxide:1||Silicon photonics:1||Size reduction effect:1||Slotted antenna:1||Spurious Tones.:1||Squarepatch antenna:1||Stiffness coefficients:1||Strain effects:1||Stress measurements:1||Stress sensors:1||TCR measurements:1||TDD system:1||Tellurium Dioxide:1||Temperature sensitivity:1||Temperature sensor:1||UV detection:1||VDP (van der Pauw) strain effects (111) silicon stress sensors:1||avalanche photodiode:1||binary lens:1||biological sensing and sensors:1||buried gate:1||clamp circuit:1||compliance coefficients:1||diffraction gratings:1||diode current:1||diode sensor:1||diode voltage:1||distributed rendezvous control:1||dynamic characteristics:1||electric field:1||embedment:1||filterfree:1||flatband voltage:1||gated ohmic anode:1||grating waveguide:1||heterojunction fieldeffect transistor:1||hollowcore fiber:1||hydrostatic pressure:1||injectionlocked oscillators:1||inline metamaterial:1||linearity in sensitivity:1||metasurface:1||monolithic integration:1||network connectivity:1||networked robots:1||normalstress:1||normallyoff:1||normallyoff operation:1||optical injection:1||optical sensing and sensors:1||phase modulation:1||phototransistor:1||photodiode:1||photoresponsivity:1||piezoresistive coefficients:1||plasma enhanced chemical vapor deposition (PECVD):1||pressuresenor:1||pressuresensitivity:1||pressuresensor system:1||pulsed characteristics:1||rectifier:1||refractive index sensor:1||resistor sensor:1||resistorsensor:1||s ratio:1||semiconductorsensor:1||sensitivity error:1||sensor networks:1||sensorresolution:1||sensorsensitivity:1||shearstress:1||silicon oxynitride (SiON):1||standing wave focusing:1||stress sensor strain effects:1||stress sensors:1||thermal reliability:1||turnon voltage:1||ultraviolet (UV):1||ultraviolet detection:1||van der Pauw:1||variable range radar:1||variable sensing range:1||개방 루프 응답:1||광 주입 잠금:1||광전 발진기:1||광학적 복소 신호 생성:1||마이크로파 포토닉스:1||분포 궤환형 레이저:1||자려 펄스 발진:1||전계 흡수 변조기:1||주입 매개 변수:1||(001) silicon:1||직접 변조:1||AlGaN:1||AlGaN/GaN MOSHFETs:1||AlGaN/GaN heterojunction:1||AlGaN/GaN heterojunction fieldeffect transistor:1||AlGaN/GaNonSi:1||AlGaN/GaNonSi HEMT:1||AlGaN/GaNonSi HFET:1||Alignment errors:1||Aufree process:1||Breakdown voltage:1||ClosedLoop Analysis:1||DPD power amplifier:1||Direct modulation:1||Distributed Bragg reflector (DBR):1||Distributed feedback laser:1||

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