ScholarWorks@Hongik: Baik, Kwang Hyeon

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Baik, Kwang Hyeon (백광현)

Science & Technology (Department of Nanomaterials Engineering)

Research Area: 재료공학, GaN LED 소자 및 반도체 공정

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GaN:13||Nonpolar:8||Hydrogen:6||Anisotropy:5||Xray diffraction:5||ZnO:4||aplane:3||Ga2O3:3||Nonpolar:3||Sensor:3||hydrogen:2||TimeDomain Spectroscopy:2||Nitrides:2||Semiconducting IIIV materials:2||HEMT:2||Zinc oxide:2||aPlane:2||aplane GaN:2||Ohmic:2||Gallium nitride:2||Birefringence:2||gallium nitride:2||Gas sensor:2||gas sensor:2||Etching:2||Lightemitting diode:1||Lithium:1||Metal Organic Chemical Vapor Deposition:1||Metal organic chemical vapor deposition:1||Metal oxide semiconductors:1||Metalorganic chemical vapor deposition:1||Metalorganic chemical vapor deposition:1||Moisture barrier:1||Monoclinic:1||Nanonetworks:1||Nonpolar crystal:1||Offcut angle:1||Ohmic contact:1||PMGI:1||Photoelectrochemical etching:1||Photoluminescence:1||Pt nanostructure:1||Quantum well:1||Sapphire:1||Schottky:1||Schottky diode:1||Semipolar:1||Semipolar crystal:1||Sensing:1||Si nanowire:1||SiNx interlayer:1||SiO2 pattern:1||Solution process:1||Strain:1||THz:1||Terahertz:1||Thinfilm transistors:1||Titanium compounds:1||Transfer length method:1||Transmission electron microscopy:1||Ultrawide bandgap semiconductor:1||Wet etching:1||XRD:1||ZnCdO:1||carbon dioxide:1||dangling bond:1||dry etching:1||encapsulation:1||gallium oxide:1||high electron mobility transistor:1||humidity:1||mPlane:1||mplane sapphire:1||metal contact:1||moisture barrier:1||nonpolar:1||ohmic:1||rplane sapphire:1||sensor:1||stacking faults:1||(100) plane:1||surface energy:1||Aplane gan:1||APTMS:1||AlGaN/GaN:1||BasalPlane Stacking Fault:1||Carrier Localization:1||Dangling bond:1||Diode:1||EPISS:1||Electrical transport:1||Etch rate:1||Film:1||Flake:1||Flexible:1||Gallium Nitride:1||Gallium oxide:1||Gold:1||Graphene:1||Graphene nanoribbon:1||Humidity:1||Hydrogen sensor:1||Hydrothermal growth:1||InGaN:1||Inductively coupled plasma:1||LED:1||

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