ScholarWorks@Hongik: Kwon, Yong woo

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Kwon, Yong woo (권용우)

Engineering (Advanced Materials)

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endurance:2||phasechange memory:2||phasechange memory (PCM):2||Phasefield method:2||crystallization:2||effective property:2||Phasechange memory:2||porous material:2||Nucleation and growth:2||flexible:2||modeling and simulation:2||Data retention:1||Degradation:1||Device simulation:1||Electrochemical processes:1||Electrochemical thermopower:1||Electrochemical waste heat harvesting:1||Finite size:1||Finiteelement method:1||Finiteelement model:1||Fluorescent stability:1||GST:1||Grain Growth:1||Hafnia:1||Hydrogen evolution reaction:1||Impedance spectroscopy:1||Interfacial switching mechanism:1||Interfacial switching memristor:1||Liion battery:1||Lightemitting diodes:1||Memory window:1||Memristor:1||Modeling and Simulation:1||Modeling and simulation:1||Molecular dynamics:1||Neuromorphic computing:1||OLED:1||PCRAM:1||Pentacene:1||Phase change memory:1||PhaseField Method:1||Phasechange random access memory (PCRAM):1||Polysilicon:1||Proportionality:1||Quantum dots:1||Reset operation current:1||Residual stress:1||Schottky barrier height modulation:1||Schottky barrier modulation:1||SiC:1||Strain engineering:1||Subthreshold slope:1||Supercapacitors:1||Synaptic device:1||Thin film:1||Transition metal chalcogenides:1||Trap density:1||Triple phase boundaries:1||Variability:1||Vertical NAND Flash Memory:1||WVTR:1||Water electrolysis:1||atomiclayer deposition:1||capacity loss:1||cell architectures:1||chalcogenide:1||cobalt oxide:1||conducting filament:1||conversion reaction:1||current efficiency:1||data retention:1||density functionaltheory:1||device simulation:1||electroluminescence:1||encapsulation:1||fieldeffect transistor:1||finite element analysis:1||finite element simulation:1||finite element simulations:1||finiteelement method:1||graphene:1||heating element:1||hierarchical structures:1||indium oxide:1||lattice truss material:1||mechanism:1||modeling:1||nanoparticle:1||nanowire:1||nucleation:1||nucleation and growth:1||nucleation and growth (NG):1||organolead halide perovskite:1||oxygen evolution reaction (OER):1||phase field:1||phasechange:1||phasechange stress:1||phasefield method (PFM):1||polyol:1||pore structure:1||porous nickel tube arrays:1||precursor:1||quantum dots:1||rapid bubble release:1||reliability:1||resistive switching memory:1||retention:1||simulation:1||spongeinspired electrodes:1||structureproperty relation:1||stuck reset:1||synapse device:1||thermal analysis:1||Aldoped shell:1||twin:1||Aluminum oxides:1||Atomic layer deposition:1||Catalytic materials:1||Chalcogenide:1||Composite electrodes:1||Contact resistance:1||Contact resistivity:1||Copper indium sulfide:1||Crystallization:1||Crystallization kinetics:1||

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94, Wausan-ro, Mapo-gu, Seoul, 04066, Korea02-320-1314

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