ScholarWorks@Hongik: kim, sang-kon

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kim, sang-kon (김상곤)

Department of General Studies (Department of General Studies)

Research Area: 물리학, 반도체광학, physics, semiconductor optics

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Lithography:16||Lithography Simulation:13||LER:6||EUV:6||Lithography simulation:5||Block Copolymer:4||FinFET:4||Line Edge Roughness:3||Metamaterials:3||EUV mask:3||Surface plasmon:2||SelfAssembly:2||EUV lithography:2||Extreme ultraviolet:2||EUV pellicle:2||EUVL:2||Mask Defect:2||Directed SelfAssembly:2||Plasmonic lithography:2||lithography simulation:2||ML defects:1||Microlens Array:1||Monte Carlo:1||Monte Carlo Method:1||N00N state:1||NanoScale Patterning:1||Nanoscale patterning:1||Nanogap:1||OLED:1||Organic LightEmitting Diodes:1||Pellicle simulation:1||Plasmonic:1||Plasmonic Lithography:1||Quantum imaging:1||Quantum lithography:1||Rayleigh criterion:1||SCFT:1||SelfConsistent Field Theory:1||SelfConsistentField Theory:1||Shrinkage Process:1||Solvent Vapor:1||Stochastic Simulation:1||Stochastic simulation:1||Surface Plasmon Interference:1||TCAD:1||Transverse deflection:1||VoteTaking:1||computational lithography:1||extreme ultraviolet:1||lithography:1||pellicle simulation:1||BCP:1||transverse deflection:1||Block Copolymer (BCP):1||Block Copolymer Lithography:1||Computational lithography:1||Coupling Efficiency:1||DSA:1||Defect Repair:1||Diffraction limit:1||Dissipative Particle Dynamics:1||EJet Printing:1||EUV Mask:1||EUVL mask defect:1||EUVL mask repair:1||Electrohydrodynamic Jet Printing:1||Electrohydrodynamic Lithography:1||Entangled photons:1||Extreme ultraviolet lithography:1||Fin‐field‐effect‐transistor:1||Line‐edge roughness:1||Line edge roughness:1||

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