ScholarWorks@Hongik: Shong, Bong geun

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Shong, Bong geun (송봉근)

Engineering (Chemical Engineering)

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Atomic layer deposition:8||Surface chemistry:6||atomic layer deposition:5||ALD:5||density functional theory:4||Density functional theory:3||titanium nitride:2||MLD:2||precursor:2||Chemical vapor deposition:2||2D materials:2||surface chemistry:2||fieldeffect transistor:2||thermal annealing:2||Precursor:2||Computational chemistry:2||Anticorrosive coating:1||Areaselective atomic layer deposition:1||Areaselective deposition:1||Atomic layer deposition (ALD):1||Atomic layer etching:1||Au:1||Betadiketonate:1||Buffer layer:1||C:1||Catalytically active sites:1||Chlorosilane:1||Composite material:1||Counter reactant:1||Density Functional Theory:1||Density functional theory calculation:1||Dielectric:1||Dielectric constant:1||Dissociative adsorption:1||Dry etching:1||Dual cation precursor:1||Electrochemical reduction of CO2:1||Enlarged deposition selectivity:1||FeO@CuCo2S4:1||Feature selection:1||First principles:1||Flexible electronic device:1||Formic acid oxidation:1||Fuel cell:1||HAR:1||Halide:1||HfSiO:1||HfSiOx:1||Hybrid materialIndium oxide:1||Hydrogen evolution reaction:1||Hydrothermal growth:1||IIINitride semiconductor:1||InAlO:1||Inherent substratedependent selectivity:1||Irreversible Bi adsorption:1||Low temperature process:1||Lowtemperature deposition:1||Machine learning:1||Metal organic:1||Moisture barrier:1||Molecular adsorption:1||Molecular design:1||Molecular layer deposition:1||Ndoped ZnO:1||NH3:1||Ni(dmamb)(2):1||Noble metal:1||Oligomerization:1||Organicinorganic hybrid:1||Oxidant:1||Oxidizer:1||PET depolymerization:1||Photolithography:1||Photoresist residue:1||Physisorption:1||Polymerization:1||Pt:1||Quantum chemistry:1||Reaction intermediates:1||Residuefree graphene:1||Ru:1||RuO2:1||Si precursor:1||SiNx:1||SixNy:1||Sn (II) precursor:1||Sn(dmamp)(2):1||SnNx:1||Spectroscopic ellipsometry:1||Supercycle:1||Surface adsorption:1||Surface reaction mechanism:1||TCAD simulation:1||TDMASn:1||TFT:1||TMDC:1||Thermal ALD:1||Thermal stability:1||TiNx:1||TiOx:1||Tin monosulfide:1||Tin oxysulfide:1||Transparent conducting oxide:1||Trisilane:1||Tungsten:1||Tungsten chloride precursor:1||Various oxidants:1||W films:1||Water:1||Zinc nitride:1||Zinc oxide:1||ZnO<sub>x</sub>N<sub>y</sub>:1||ZnOdecorated MoS2 nanosheets:1||ZnOdecorated MoS2 nanowires:1||adsorption mechanism:1||aminosilane precursor:1||area selective atomic layer deposition:1||area selective deposition:1||areaselective ALD:1||areaselective atomic layer deposition:1||areaselective deposition:1||atomiclayer deposition:1||band gap:1||black phosphorus:1||catalysts:1||catalytic materials:1||charge transfer:1||cosolvent:1||computational chemistry:1||conformality:1||conversion mechanism:1||defect mechanism:1||density functionaltheory:1||dimethylaluminum isopropoxide:1||energy storage:1||enlarged deposition selectivity:1||etching:1||fluorination:1||fluorine free tungsten:1||glycolysis:1||glycolysis chemical recycling:1||gradient adsorption:1||graphitization:1||hybrid nanostructure:1||hydrogen evolution reaction:1||indicone:1||indium gallium zinc oxide:1||indium oxide:1||inherent substratedependent selectivity:1||low temperature:1||mechanistic kinetic model:1||metal oxides:1||mixeddimensional:1||molecular adsorption:1||molecular layer deposition:1||molecule epitaxy:1||multicomponent ALD:1||nanoelectronics:1||oligomers:1||pblock materials:1||phase transformation:1||plasma treatment:1||plasmaenhanced atomic layer deposition (PEALD):1||polyethylene:1||precursor chemistry:1||rareearth oxides:1||ruthenium:1||selective deposition:1||semiconductor device:1||silicon dioxide:1||silicon oxide:1||surface energy control:1||tellurium:1||thinfilm growth:1||titanium dioxide:1||transition metal chalcogenides:1||transition metal dichalcogenide:1||trimethylaluminum:1||van der Waals heterostructures:1||vdW heterostructures:1||vertical transistors:1||water electrolysis:1||(60) fullerenes:1||zolefins:1||1hexene:1||2DEG:1||ABCALD:1||ALDetch supercycle:1||ALDetching supercycle:1||Adsorption:1||Alucone:1||Alumina:1||Aluminum gallium nitride:1||Aluminum oxide:1||Aluminum oxide (Al2O3):1||Aminodisilane precursor:1||Amorphous carbon:1||Anatase:1||Annealing:1||

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