습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(2) - 표면거칠기와 전기적 특성의 상관관계

Abstract

The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10 × 10, 40 × 40, and 1000 × 1000 μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10 × 10 μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40 × 40 μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.