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Numerical simulation of p-type pseudu-vertical diamond Schottky barrier diode using incomplete ionization model
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ogyun Seok | - |
| dc.date.available | 2021-02-26T05:42:04Z | - |
| dc.date.created | 2021-02-19 | - |
| dc.date.issued | 2020-11-09 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/18705 | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Numerical simulation of p-type pseudu-vertical diamond Schottky barrier diode using incomplete ionization model | - |
| dc.title.alternative | Numerical simulation of p-type pseudu-vertical diamond Schottky barrier diode using incomplete ionization model | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ogyun Seok | - |
| dc.identifier.bibliographicCitation | International Microprocesses and Nanotechnology Conference, v.1, no.1, pp.20202226-20202226 | - |
| dc.relation.isPartOf | International Microprocesses and Nanotechnology Conference | - |
| dc.relation.isPartOf | International Microprocesses and Nanotechnology Conference | - |
| dc.citation.title | International Microprocesses and Nanotechnology Conference | - |
| dc.citation.volume | 1 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 20202226-20202226 | - |
| dc.citation.endPage | 20202226-20202226 | - |
| dc.citation.conferencePlace | 온라인 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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