Temperature dependent photoluminescence study on ZnO/Graphene nanocomposite films
DC Field | Value | Language |
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dc.contributor.author | Lee, Eunsil | - |
dc.contributor.author | Kim, Jong-Young | - |
dc.contributor.author | Park, Yong-Il | - |
dc.contributor.author | An, Sung Jin | - |
dc.date.available | 2021-04-29T08:43:05Z | - |
dc.date.created | 2020-06-16 | - |
dc.date.issued | 2015-04 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/19166 | - |
dc.description.abstract | We report observation of both free and defect-mediated excitonic emissions from temperature-dependent PL study on ZnO/graphene oxide (G-O) nanocomposite grown by ultrasonic assisted spray pyrolysis (UASP). From the temperature-dependent photoluminescence (PL) spectra of the ZnO/G-O nanocomposite, new graphene-related peak was observed at 372 nm along with the exciton transition bound to neutral acceptors or deep donors. The PL intensity of new graphene-related peaks (3.33 eV) become more prominent with increasing G-O concentration, and it was saturated or decreased with the addition of >7.0 wt% of G-O. This feature indicates that new graphene-related states were created below conduction band of ZnO, which supports the excitonic PL enhancement by graphene-embedding is contributed not by charge transfer, but by vacancy filling effect of G-O. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | AL-DOPED ZNO | - |
dc.subject | THERMOELECTRIC PROPERTIES | - |
dc.subject | PHOTOCATALYTIC DEGRADATION | - |
dc.subject | CHARGE-TRANSPORT | - |
dc.subject | GRAPHENE | - |
dc.subject | FABRICATION | - |
dc.subject | TRANSISTOR | - |
dc.subject | NANORODS | - |
dc.title | Temperature dependent photoluminescence study on ZnO/Graphene nanocomposite films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Yong-Il | - |
dc.contributor.affiliatedAuthor | An, Sung Jin | - |
dc.identifier.doi | 10.1016/j.cap.2014.12.025 | - |
dc.identifier.wosid | 000350582900022 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.4, pp.563 - 566 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 563 | - |
dc.citation.endPage | 566 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001988782 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | AL-DOPED ZNO | - |
dc.subject.keywordPlus | THERMOELECTRIC PROPERTIES | - |
dc.subject.keywordPlus | PHOTOCATALYTIC DEGRADATION | - |
dc.subject.keywordPlus | CHARGE-TRANSPORT | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSISTOR | - |
dc.subject.keywordPlus | NANORODS | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Vapour synthesis | - |
dc.subject.keywordAuthor | Photoluminescence | - |
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