Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정훈주 | - |
dc.contributor.author | 신용원 | - |
dc.contributor.author | 조봉래 | - |
dc.date.accessioned | 2023-12-11T12:00:32Z | - |
dc.date.available | 2023-12-11T12:00:32Z | - |
dc.date.issued | 2010 | - |
dc.identifier.issn | 1598-0316 | - |
dc.identifier.issn | 2158-1606 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/23023 | - |
dc.description.abstract | A new level shifter using low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs) for low-power applications is proposed. The proposed level shifter uses a capacitive-coupling effect and can reduce the power consumption owing to its no-short-circuit current. Its power saving over the conventional level shifter is 72% for a 3.3 V input and a 10 V output. | - |
dc.format.extent | 3 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | 한국정보디스플레이학회 | - |
dc.title | Low-temperature polycrystalline silicon level shifter using capacitive coupling for low-power operation | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.bibliographicCitation | Journal of Information Display, v.11, no.1, pp 21 - 23 | - |
dc.citation.title | Journal of Information Display | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 21 | - |
dc.citation.endPage | 23 | - |
dc.identifier.kciid | ART001433983 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kciCandi | - |
dc.subject.keywordAuthor | low power | - |
dc.subject.keywordAuthor | level shifter | - |
dc.subject.keywordAuthor | capacitive coupling | - |
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