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Two-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimen
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Bee-lyong | - |
| dc.date.accessioned | 2023-12-11T16:00:29Z | - |
| dc.date.available | 2023-12-11T16:00:29Z | - |
| dc.date.issued | 2008-09 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/24567 | - |
| dc.format.extent | 3 | - |
| dc.publisher | Elsevier | - |
| dc.title | Two-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimen | - |
| dc.title.alternative | Two-dimensional dopant profiling in semicondeuctor devices by electron holography and chemical etching delineation techniques with the same specimen | - |
| dc.type | Article | - |
| dc.identifier.bibliographicCitation | Microelectronics Reliability, v.48, pp 1734 - 1736 | - |
| dc.citation.title | Microelectronics Reliability | - |
| dc.citation.volume | 48 | - |
| dc.citation.startPage | 1734 | - |
| dc.citation.endPage | 1736 | - |
| dc.description.isOpenAccess | N | - |
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