Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums
DC Field | Value | Language |
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dc.contributor.author | Kim, Myung Jun | - |
dc.contributor.author | Seo, Youngran | - |
dc.contributor.author | Kim, Hoe Chul | - |
dc.contributor.author | Lee, Yoonjae | - |
dc.contributor.author | Choe, Seunghoe | - |
dc.contributor.author | Kim, Young Gyu | - |
dc.contributor.author | Cho, Sung Ki | - |
dc.contributor.author | Kim, Jae Jeong | - |
dc.date.accessioned | 2024-02-27T13:00:34Z | - |
dc.date.available | 2024-02-27T13:00:34Z | - |
dc.date.issued | 2015-05-01 | - |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.issn | 1873-3859 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/26959 | - |
dc.description.abstract | Through Silicon Via (TSV) technology is essential to accomplish 3-dimensional packaging of electronics. Hence, more reliable and faster TSV filling by Cu electrodeposition is required. Our approach to improve Cu gap-filling in TSV is based on the development of new organic additives for feature filling. Here, we introduce our achievements from the synthesis of choline-based leveler to the feature filling using a synthesized leveler. The choline-based leveler, which includes two quaternary ammoniums at both ends of the molecule, is synthesized from glutaric acid. The characteristics of the choline-based additive are examined by the electrochemical analyses, and it is confirmed that the choline-based leveler shows a convection dependent adsorption behavior, which is essential for leveling. The interactions between the polymeric suppressor, accelerator, and the choline-based leveler are also investigated by changing the convection condition. Using the combination of suppressor, accelerator, and the choline-based leveler, the extreme bottom-up filling of Cu at trenches with dimensions similar to TSV are fulfilled. The mechanism of Cu gap-filling is demonstrated based on the results of electrochemical analyses and feature filling. (C) 2015 Elsevier Ltd. All rights reserved. | - |
dc.format.extent | 8 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Galvanostatic bottom-up filling of TSV-like trenches: Choline-based leveler containing two quaternary ammoniums | - |
dc.type | Article | - |
dc.publisher.location | 영국 | - |
dc.identifier.doi | 10.1016/j.electacta.2015.02.173 | - |
dc.identifier.wosid | 000352496700023 | - |
dc.identifier.bibliographicCitation | ELECTROCHIMICA ACTA, v.163, pp 174 - 181 | - |
dc.citation.title | ELECTROCHIMICA ACTA | - |
dc.citation.volume | 163 | - |
dc.citation.startPage | 174 | - |
dc.citation.endPage | 181 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.subject.keywordPlus | THROUGH-SILICON-VIAS | - |
dc.subject.keywordPlus | ASPECT-RATIO | - |
dc.subject.keywordPlus | BLIND HOLES | - |
dc.subject.keywordPlus | SEED LAYERS | - |
dc.subject.keywordPlus | HIGH-SPEED | - |
dc.subject.keywordPlus | CU SEED | - |
dc.subject.keywordPlus | SI VIAS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | Through Silicon Via (TSV) | - |
dc.subject.keywordAuthor | copper electrodeposition | - |
dc.subject.keywordAuthor | leveler | - |
dc.subject.keywordAuthor | choline | - |
dc.subject.keywordAuthor | bottom-up filling | - |
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