Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Aydin, Mehmet Enver | - |
dc.contributor.author | Yakuphanoglu, Fahrettin | - |
dc.contributor.author | Eom, Jae-Hoon | - |
dc.contributor.author | Hwang, Do-Hoon | - |
dc.date.accessioned | 2024-02-27T13:02:40Z | - |
dc.date.available | 2024-02-27T13:02:40Z | - |
dc.date.issued | 2007-01-01 | - |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.issn | 1873-2135 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/27200 | - |
dc.description.abstract | The electrical characterization of the Al/poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV)/p-Si structure has been investigated by current voltage and capacitance-voltage methods. The Al/MEH-PPV/p-Si Schottky diode with the ideality factor value of 1.88 obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of an insulating layer on the organic semiconductor. The barrier height (Phi(b,o) = 0.80 eV) obtained from the I-V characteristic is lower than the barrier height (Phi(b,o) = 1.19eV) obtained from the C-V characteristic. The discrepancy between Phi(b,o)(I-V) and Phi(b,0)(I-V) can be due to the existence of the interfacial native oxide and the organic MEH-PPV layers between the semiconductor and Schottky contact metal. The barrier height value for the Al/MEH-PPV film/p-Si/Al contact obtained at the room temperature that is significantly larger than that for the conventional Al/p-Si Schottky diode. The density distribution curves of the interface states is in the range (0.32-E-v) to (0.68-E-v)eV. The interface state density N-ss ranges from 3.84 x 10(14) cm(-2) eV(-1) in (0.32-E-v)eV to 1 x 10(14) cm(-2) eV(-1) in (0.68-E-v)eV, of the Al/MEH-PPV/p-Si. The interface state density has an exponential rise with bias from the midgap towards the top of the valence band of the p-Si. (c) 2006 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Electrical characterization of Al/MEH-PPV/p-Si Schottky diode by current-voltage and capacitance-voltage methods | - |
dc.type | Article | - |
dc.publisher.location | 네델란드 | - |
dc.identifier.doi | 10.1016/j.physb.2006.04.012 | - |
dc.identifier.wosid | 000243886100039 | - |
dc.identifier.bibliographicCitation | PHYSICA B-CONDENSED MATTER, v.387, no.1-2, pp 239 - 244 | - |
dc.citation.title | PHYSICA B-CONDENSED MATTER | - |
dc.citation.volume | 387 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 239 | - |
dc.citation.endPage | 244 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CONTACT BARRIER DEVICES | - |
dc.subject.keywordPlus | SEMICONDUCTOR CONTACT | - |
dc.subject.keywordPlus | JUNCTION PROPERTIES | - |
dc.subject.keywordPlus | CURRENT-TRANSPORT | - |
dc.subject.keywordPlus | HEIGHT | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | INHOMOGENEITIES | - |
dc.subject.keywordPlus | PARAMETERS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | organic and inorganic semiconductor contact and Schottky barrier height | - |
dc.subject.keywordAuthor | ideality factor | - |
dc.subject.keywordAuthor | series resistance | - |
dc.subject.keywordAuthor | interface states distribution | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
350-27, Gumi-daero, Gumi-si, Gyeongsangbuk-do, Republic of Korea (39253)054-478-7170
COPYRIGHT 2020 Kumoh University All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.