Characteristics of Al doped ZnO co-sputtered InZnO anode films prepared by direct current magnetron sputtering for organic light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Bae, Jung-Hyeok | - |
dc.contributor.author | Kim, Han-Ki | - |
dc.date.accessioned | 2024-02-27T15:02:46Z | - |
dc.date.available | 2024-02-27T15:02:46Z | - |
dc.date.issued | 2008-09-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/27272 | - |
dc.description.abstract | We studied the characteristics of aluminum zinc oxide (AZO) co-sputtered indium zinc oxide (IZO) anode films prepared by dual target direct current (DC) magnetron sputtering at room temperature in a pure Ar ambient environment. It was shown that the AZO co-sputtered IZO anode films exhibited comparable resistivity to pure IZO anode films eventhough AZO co-sputtered IZO has lower indium content. In addition, ultraviolet and visible spectrometer examination results showed that AZO co-sputtered IZO anodes have high transparency comparable to pure IZO anodes. Furthermore, AZO co-sputtered IZO shows a very smooth and featureless surface due to low substrate temperature during the cosputtering process. Using X-ray photoelectron spectroscopy depth profile examination, it was observed that the increase in DC power of the AZO target resulted in a significant decrease of the relative indium, element in the AZO co-sputtered IZO anode films. The current density-voltage-luminance (J-V-L) of the organic light light-emitting diodes (OLEDs) fabricated on an AZO co-sputtered IZO anode was similar to that of the OLED fabricated on a pure IZO anode. In addition, it was found that the J-V-L characteristics of the OLED were critically dependent on the sheet resistance of the AZO co-sputtered IZO anode. (c) 2008 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 5 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Characteristics of Al doped ZnO co-sputtered InZnO anode films prepared by direct current magnetron sputtering for organic light-emitting diodes | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.1016/j.tsf.2008.05.035 | - |
dc.identifier.wosid | 000259727900099 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.516, no.21, pp 7866 - 7870 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 516 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 7866 | - |
dc.citation.endPage | 7870 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ALTERNATIVES | - |
dc.subject.keywordAuthor | AZO | - |
dc.subject.keywordAuthor | co-sputtered IZO | - |
dc.subject.keywordAuthor | anode | - |
dc.subject.keywordAuthor | resistivity | - |
dc.subject.keywordAuthor | transparency | - |
dc.subject.keywordAuthor | organic light emitting diodes (OLEDs) | - |
dc.subject.keywordAuthor | magnetron sputtering | - |
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