Organic thin-film transistors using photocurable acryl-fuctionalized polyhedral oligomeric silsesquioxanes as gate dielectrics
DC Field | Value | Language |
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dc.contributor.author | Kim, Yuntae | - |
dc.contributor.author | Cho, Hyunduck | - |
dc.contributor.author | Kwak, Jeonghun | - |
dc.contributor.author | Lee, Jong-Keun | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Hwang, Do-Hoon | - |
dc.date.accessioned | 2024-02-27T16:31:26Z | - |
dc.date.available | 2024-02-27T16:31:26Z | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 0379-6779 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28132 | - |
dc.description.abstract | Polyhedral oligomeric silsesquioxane (POSS)-based photocurable insulating materials with methacryl (POSS-MA) or methylmethacryl (POSS-MMA) functional groups were used as gate dielectrics for pentacene-based organic thin-film transistors (OTFTs). Thin films of POSS-MA and POSS-MMA were cross-linked and completely solidified under UV irradiation in the presence of selected photoradical initiators. Metal/insulator/metal devices with a structure of indium tin oxide (ITO)/insulator/Au were fabricated to measure the leakage current and capacitance of the POSS-MA and POSS-MMA thin films. Pentacene-based OTFTs were fabricated using the synthesized POSS derivatives as gate dielectric layers, and the performance of the devices was compared with that of an OTFT fabricated using a well-known poly(vinylphenol) (PVP) insulator. The performance of the OTFTs fabricated using the POSS-MA and POSS-MMA film was comparable to that of the device fabricated using the PVP insulator. The highest mobility of the pentacene-based OTFTs using POSS-MA and POSS-MMA insulators were 0.13 and 0.17 cm(2)/Vs, respectively. (C) 2012 Elsevier B.V. All rights reserved. | - |
dc.format.extent | 6 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Organic thin-film transistors using photocurable acryl-fuctionalized polyhedral oligomeric silsesquioxanes as gate dielectrics | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.1016/j.synthmet.2012.08.015 | - |
dc.identifier.wosid | 000311917900003 | - |
dc.identifier.bibliographicCitation | SYNTHETIC METALS, v.162, no.21-22, pp 1798 - 1803 | - |
dc.citation.title | SYNTHETIC METALS | - |
dc.citation.volume | 162 | - |
dc.citation.number | 21-22 | - |
dc.citation.startPage | 1798 | - |
dc.citation.endPage | 1803 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | sci | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalResearchArea | Polymer Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalWebOfScienceCategory | Polymer Science | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CONJUGATED POLYMERS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INSULATORS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | Photocurable insulator | - |
dc.subject.keywordAuthor | Polyhedral oligomeric silsesquioxane | - |
dc.subject.keywordAuthor | Organic thin-film transistor | - |
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