Enhanced Anion Interaction by Polarity Control on CNTVT:SVS Copolymers for Improving Nonvolatile Characteristics in Neuromorphic Computing
DC Field | Value | Language |
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dc.contributor.author | Lee, Donghwa | - |
dc.contributor.author | Ayuningtias, Landep | - |
dc.contributor.author | Hwang, Jinwoo | - |
dc.contributor.author | Sung, Junho | - |
dc.contributor.author | Kang, Joonhee | - |
dc.contributor.author | Kim, Yun-Hi | - |
dc.contributor.author | Lee, Eunho | - |
dc.date.accessioned | 2024-06-14T08:30:20Z | - |
dc.date.available | 2024-06-14T08:30:20Z | - |
dc.date.issued | 2024-05 | - |
dc.identifier.issn | 2639-4979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/28739 | - |
dc.description.abstract | Synaptic devices that simulate biological functions are of interest in neuromorphic computing, because of their low power consumption characteristics. However, achieving long-term plasticity (LTP) in electrolyte-gated transistors (EGTs) is challenging, because the electric double layer (EDL) of the electrolyte/channel disappears when the gate electrode voltage is removed. In this study, we fabricated a CNTVT-based EGTs by adjusting the polarity of the backbone. This process involves improving the polarity of the backbone by adjusting the DPP-CNTVT ratio. Furthermore, it facilitates increased binding of TFSI anions in DEME-TFSI at the electrolyte/channel interface. The CNTVT-based EGTs successfully achieved LTP and exhibited essential synaptic properties, including paired-pulse facilitation (PPF) and a high-pass filter. Furthermore, the results of driving MNIST handwritten digits based on long-term potentiation/depression (LTP/LTD) with controlled backbone polarity improved from 50.18% to 93.28%. These findings offer a simple architectural design for synaptic devices that leverage state-of-the-art neural modeling techniques. | - |
dc.format.extent | 10 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Enhanced Anion Interaction by Polarity Control on CNTVT:SVS Copolymers for Improving Nonvolatile Characteristics in Neuromorphic Computing | - |
dc.type | Article | - |
dc.publisher.location | 미국 | - |
dc.identifier.doi | 10.1021/acsmaterialslett.4c00087 | - |
dc.identifier.scopusid | 2-s2.0-85193586550 | - |
dc.identifier.wosid | 001232682200001 | - |
dc.identifier.bibliographicCitation | ACS MATERIALS LETTERS, v.6, no.5, pp 2329 - 2338 | - |
dc.citation.title | ACS MATERIALS LETTERS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2329 | - |
dc.citation.endPage | 2338 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | TERM SYNAPTIC PLASTICITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
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