Microstructure of spark plasma sintered silicon carbide with Al-B-C
- Authors
- Cho, Kyeong-Sik; Munir, Zuhair A.; Lee, Hyun-Kwuon
- Issue Date
- Oct-2008
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- SiC; Al-B-C additive; Spark plasma sintering; Microstructure
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.5, pp.500 - 505
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 9
- Number
- 5
- Start Page
- 500
- End Page
- 505
- URI
- https://scholarworks.bwise.kr/kumoh/handle/2020.sw.kumoh/2904
- ISSN
- 1229-9162
- Abstract
- Densification of SiC powder with total amounts of 2, 4, 8 wt% Al-B-C additive was carried out by spark plasma sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short soaking time to obtain fully-dense materials. The heating rate and applied pressure were kept at 100 K . minute(-1) and 40 MPa, while the sintering temperature and soaking time varied from 1,700-1,800 degrees C for 10-40 minutes, respectively. The SPS-sintered SiC at 1,800 degrees C with different amounts of Al-B-C reached near-theoretical density. The sintered SiC ceramics were predominantly composed of 6H polytype with 15R and 4H polytype as minor phases. The microstructure of SiC sintered up to 1,750 degrees C consisted of equiaxed grains. In contrast, the growth of large elongated SiC grains in small matrix grains was shown in sintered bodies at 1800 degrees C, and a plate-like grains interlocking microstructure had been developed by increasing the soaking time at 1800 degrees C. The grain growth rate decreases with increasing amounts of Al-B-C in SiC, however, the volume fraction and the aspect ratio of large elongated SiC grains in the sintered bodies increased.
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