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Results 1-1 of 1 (Search time: 0.001 seconds).
Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling
Jeong, Jee-Hun; Seok, Ogyun; Lee, Ho-Jun
Article
Issue Date
2021
Citation
APPLIED SCIENCES-BASEL, v.11, no.24
Publisher
MDPI
1
Discover
Author
Lee, Ho-Jun
1
Seok,, O-Gyun
1
Subject
analytical modeling
1
bottom protection p-well
1
device simulation
1
ION-IMPLANTATION
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OXIDE
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power semiconductor
1
silicon carbide
1
trench MOSFETs
1
UMOSFETS
1
Date Issued
2021
1
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Article
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English
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Applied Sciences-basel
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