ScholarWorks@Kumoh: An, sung jin

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An, sung jin (안성진)

College of Engineering (Department of Materials Science and Engineering)

Research Area: Nano Optoelectronics Materials (LEDs, Solar cell, Graphene)

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GaN:8||ZnO:6||AlGaN:5||lowfrequency noise:5||graphene:5||nanowire:3||die attach:3||current collapse:2||HEMT:2||pulse measurement:2||water glass:2||Photoluminescence:2||wrapgate transistor:2||sodium silicate:2||solgel:2||chemical vapor deposition:2||graphene oxide:2||photoluminescence:2||Nanorod:2||Heterostructure:1||High electron mobility transistors (HEMTs):1||High salt:1||Hydrogen Evolution:1||Insitu Silicon Nitride (SiN):1||Lowfrequency noise:1||MISFET:1||MOCVD:1||MoS2 photodetectors:1||Nanoparticle:1||Nanotube:1||Oilinwater emulsions:1||Paramagnetism:1||Piezophototronic effect:1||Piezotronic effect:1||Polyoxyethylene lauryl ether:1||SC1:1||Schottky barrier diode:1||Screening effect:1||SiO2 preform:1||Silicon wafer:1||SnAg binary system:1||SnSb:1||Solar cell:1||Spectral reflectance:1||Stable dispersions:1||Straininduced:1||Strainmodulated:1||Structure:1||Thin graphene layer:1||Ti silicide:1||Vapour synthesis:1||Wafer cleaning process:1||ZnS:1||as doped ptype ZnO:1||backside metal:1||backside metallization:1||barrier height:1||boron oxide:1||buffer resistance:1||cap layer:1||carrier number fluctuation:1||carrier number fluctuations:1||carrier scattering:1||carrier trap:1||correlated mobility fluctuations:1||electrical conductivity:1||electrophoretic deposition:1||extremely lightweight:1||fnoise:1||gr noise:1||generationrecombination noise:1||graphene oxide ink:1||graphene oxide viscosity:1||hightemperature semiconductor:1||hot carriers:1||humanmachine:1||in situ cap layer:1||inhomogeneities:1||ion implantation:1||multilayer thin film:1||nanosilica:1||nanosilica powder:1||nanomaterials:1||normallyoff:1||octamethylcyclotetrasiloxane:1||octamethylcyclotetrasiloxane (OMCTS):1||optical fiber:1||optical fibers:1||optoelectronic properties:1||outside vapor deposition:1||oxidized graphene:1||oxygen functional groups:1||photoconductive effect:1||photocurrent mapping:1||photothermoelectric effect:1||piezoresistive:1||polyethylene:1||polystyrene:1||potassium permanganate:1||pulsed laser deposition:1||rapid thermal annealing:1||shear strength.:1||silica preform:1||1:1||soldering:1||solid precursor:1||sulfuric acid:1||surface/core:1||transition metal dichalcogenides:1||transparency:1||triboelectric sensor:1||ultraflexible:1||vaporizer:1||viscosity increase:1||whisker:1||wide band gap semiconductors:1||silica soot:1||1/fnoise:1||Ag/Sn/Ag sandwich structure:1||Al composition:1||Al diffusion:1||AlGaN/GaN:1||Backside metallization:1||DNA biomolecule:1||Dopantinduced:1||EXAFS:1||FinFET:1||Flexible GaN film:1||Flexible MoS2:1||GaN HEMT:1||GaN junctionless:1||Graphene:1||Graphene layer:1||Graphene oxide nanoplatelets:1||HEMTs:1||

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350-27, Gumi-daero, Gumi-si, Gyeongsangbuk-do, Republic of Korea (39253)054-478-7170

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