High Performance Flexible Organic Thin Film Transistors (OTFTs) with Octadecyltrichlorsilane/Al2O3/Poly(4-vinylphenol) Multilayer Insulators
- Authors
- Rahman, Mohammad Arifur; Kim, Hyunho; Lee, Young Kyu; Lee, Chiyoung; Nam, Hosoek; Lee, Jang-Sik; Soh, Hoesup; Lee, Jong-Kwon; Lee, Eun-Gu; Lee, Jaegab
- Issue Date
- Feb-2012
- Publisher
- American Scientific Publishers
- Keywords
- UV; Al2O3; OTS; OTFTs
- Citation
- Journal of Nanoscience and Nanotechnology, v.12, no.2, pp 1348 - 1352
- Pages
- 5
- Journal Title
- Journal of Nanoscience and Nanotechnology
- Volume
- 12
- Number
- 2
- Start Page
- 1348
- End Page
- 1352
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/15408
- DOI
- 10.1166/jnn.2012.4695
- ISSN
- 1533-4880
1533-4899
- Abstract
- The incorporation of a thin, atomic layer deposited Al2O3 layer in between a spin-coated poly-4-vinyl phenol (PVP) organic layer and octadecyltrichlorsilane (OTS) in the multilayer gate dielectric for pentacene organic thin film transistors on a n(+)-Si substrate reduced the gate leakage current and thereby significantly enhanced the current on/off ratio up to 2.8 x 10(6). Addition of the OTS monolayer on the UV-treated Al2O3 improved the crystallinity of the pentacene layer, where the OTS/UV-treated Al2O3 surfaces increased their contact angles to 100 degrees. X-ray diffraction (XRD) analysis revealed a more intense (001) crystal reflectance of pentacene deposited on OTS/UV-treated Al2O3 surface than that on OTS/Al2O3 surface. Moreover, the improved pentacene layer contributed to the field effect mobility (0.4 cm(2)/Vs) and subsequently improved the electrical performances of organic thin film transistor (OTFT) devices. This PVP/UV treated Al2O3/OTS multilayer gate dielectric stack was superior to those of the device with the single PVP gate dielectrics due to the improved crystallinity of pentacene.
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