Systematic design of hierarchical Ni3S2/MoO2 nanostructures grown on 3D conductive substrate for high-performance pseudocapacitors
- Authors
- Lee, Young-Woo; Kim, Min-Cheol; Quoc Hung Nguyen; Ahn, Wook; Jung, Jae-Eun; Park, Kyung-Won; Sohn, Jung Inn
- Issue Date
- 1-Feb-2019
- Publisher
- Pergamon Press Ltd.
- Keywords
- Nickel sulfide; Molybdenum oxide; Nanoarray; Nanowire; Pseudocapacitor
- Citation
- Ceramics International, v.45, no.2, pp 2670 - 2675
- Pages
- 6
- Journal Title
- Ceramics International
- Volume
- 45
- Number
- 2
- Start Page
- 2670
- End Page
- 2675
- URI
- https://scholarworks.bwise.kr/sch/handle/2021.sw.sch/4732
- DOI
- 10.1016/j.ceramint.2018.10.100
- ISSN
- 0272-8842
1873-3956
- Abstract
- For high-performance pseudocapacitors, the rational design of nanoarchitectures has gained extensive attention to achieve superior pseudo-capacitive behaviors such as excellent energy storing ability and long-term cyclability. Here, we report systematically designed hierarchical Ni3S2/MoO2 (H-Ni3S2/MoO2) nanostructures directly grown on a 3D conductive substrate via a facile one-step synthesis route. The synthesized H-Ni3S2/MoO2 exhibits a high specific capacitance of 1376.1 F g(-1) at 1 mA cm(-2), a high energy density of 45.9 Wh kg(-1), and a good capacitance retention of 86.0% during 2000 cycles. These enhanced pseudo-capacitive features of H-Ni3S2/MoO2 are attributed to their unique nanoarchitectures favorable for pseudo-capacitive behavior as follows: (1) densely arrayed Ni3S2 nanoarchitectures consisting of the primary 1D nanowires and the secondary 2D nanosheets providing large electrolyte contact areas that can increase specific capacitances, and (2) well-engineered interfacial layer of MoO2 that can induce good electrochemical cyclability. Thus, our results suggest that the H-Ni3S2/MoO2 can be utilized as a promising pseudo-capacitive electrode for high-performance pseudocapacitors.
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