ScholarWorks@SOONCHUNHYANG UNIVERSITY: Lee, Ho nyeon

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Lee, Ho nyeon (이호년)

College of Engineering (Department of Display and Electronic Information Engineering)

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OLED:4||outcoupling:4||thinfilm transistor:3||thinfilm transistors (TFTs):3||ZnS:3||CdSe:3||MoS2:3||CdSe/ZnS:3||titanium oxide:2||Annealing:2||Thin film transistor:2||Indium:2||tungsten oxide:2||twodimensional:2||Quantumdot lightemitting diode (QLED):2||zinc:2||Recombination rate:2||White organic light emitting diodes(WOLEDs):2||quantum dots:2||.:2||IGZO:2||reactive thermal evaporation:2||OSC:2||Color shift:2||tandem:2||QDLED:2||dual function:2||N2O plasma treatment:1||Ni anode:1||Organic lightemitting diode:1||PType:1||PVOLED:1||Quantum dot lightemitting diode (QLED):1||Quantum dots:1||QuantumDot LightEmitting Diodes (QLEDs):1||SelfAligned:1||Selfaligned coplanar:1||Series Resistance:1||Subthreshold Slope:1||TAPC:1||TFT:1||Thermal Treatment:1||Thermal annealing:1||ThinFilm Transistor:1||Thinfilm transistors:1||Thinfilm transistors (TFTs):1||Vacuum thermal evaporation:1||amorphous indium zinc oxide:1||annealing:1||backchannel etch:1||buffer:1||copper oxide:1||core diameter:1||degradation:1||electric field intensity:1||energy levels:1||evaporation:1||fieldeffect transistor:1||flexible:1||galliumindiumzinc oxide:1||gate bias stress:1||glass:1||hole injection layer (HIL):1||interconnecting layer (ICL):1||lanthanum:1||magnesium fluoride:1||molybdenum oxide:1||multicathode:1||numerical analysis:1||organic lightemitting diodes:1||organic solar cell:1||ptype:1||passivation:1||perturbation:1||photovoltaic:1||photovoltaic organic lightemitting diode:1||polyethylene naphthalate (PEN):1||pulse driving:1||quantum mechanics:1||quantumdot lightemitting diode:1||selfaligned topgate structure:1||semiconductor device fabrication:1||sputtering:1||surface plasmon polariton (SPP):1||thermal evaporation:1||tin compounds:1||transient:1||transient electroluminescence:1||transparent:1||transparent metal oxide:1||two dimensional:1||vanadium oxide:1||광추출:1||반도체소자/회로:1||발광다이오드:1||양자점:1||Amorphous semiconductors:1||Ar plasma treatment:1||Band gap:1||Buffer:1||Cellulose paper:1||Channel Length:1||Charge balance:1||Contact Resistance:1||Copper Oxide:1||Core size:1||Doping:1||Drain Bias:1||Electric field intensity:1||Electrontransporting layer:1||Emission wavelength:1||Gate insulator:1||Hybrid quantum dot (HQD):1||IZO:1||Impedance spectroscopy:1||Implantation:1||Indium gallium zinc oxide:1||Indium zinc oxide:1||Interface:1||Lightemitting diode:1||Mobility:1||N2O plasma:1||

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(31538) 22, Soonchunhyang-ro, Asan-si, Chungcheongnam-do, Republic of Korea+82-41-530-1114

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