One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, B[Ahn, Byungwook] | - |
dc.contributor.author | Kim, Y[Kim, Yoonsok] | - |
dc.contributor.author | Kim, M[Kim, Meeree] | - |
dc.contributor.author | Yu, HM[Yu, Hyang Mi] | - |
dc.contributor.author | Ahn, J[Ahn, Jaehun] | - |
dc.contributor.author | Sim, E[Sim, Eunji] | - |
dc.contributor.author | Ji, H[Ji, Hyunjin] | - |
dc.contributor.author | Gul, HZ[Gul, Hamza Zad] | - |
dc.contributor.author | Kim, KS[Kim, Keun Soo] | - |
dc.contributor.author | Ihm, K[Ihm, Kyuwook] | - |
dc.contributor.author | Lee, H[Lee, Hyoyoung] | - |
dc.contributor.author | Kim, EK[Kim, Eun Kyu] | - |
dc.contributor.author | Lim, SC[Lim, Seong Chu] | - |
dc.date.accessioned | 2023-10-16T03:47:16Z | - |
dc.date.available | 2023-10-16T03:47:16Z | - |
dc.date.created | 2023-10-16 | - |
dc.date.issued | 2023-08-30 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/108655 | - |
dc.description.abstract | Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | HYSTERESIS | - |
dc.subject | MOS2(0001) | - |
dc.subject | ADSORPTION | - |
dc.subject | TRANSPORT | - |
dc.subject | YIELD | - |
dc.title | One-Step Passivation of Both Sulfur Vacancies and SiO<sub>2</sub> Interface Traps of MoS<sub>2</sub> Device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, B[Ahn, Byungwook] | - |
dc.contributor.affiliatedAuthor | Kim, M[Kim, Meeree] | - |
dc.contributor.affiliatedAuthor | Yu, HM[Yu, Hyang Mi] | - |
dc.contributor.affiliatedAuthor | Ahn, J[Ahn, Jaehun] | - |
dc.contributor.affiliatedAuthor | Sim, E[Sim, Eunji] | - |
dc.contributor.affiliatedAuthor | Lee, H[Lee, Hyoyoung] | - |
dc.contributor.affiliatedAuthor | Lim, SC[Lim, Seong Chu] | - |
dc.identifier.doi | 10.1021/acs.nanolett.3c01753 | - |
dc.identifier.scopusid | 2-s2.0-85171202589 | - |
dc.identifier.wosid | 001064983300001 | - |
dc.identifier.bibliographicCitation | NANO LETTERS, v.23, no.17, pp.7927 - 7933 | - |
dc.relation.isPartOf | NANO LETTERS | - |
dc.citation.title | NANO LETTERS | - |
dc.citation.volume | 23 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 7927 | - |
dc.citation.endPage | 7933 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | HYSTERESIS | - |
dc.subject.keywordPlus | MOS2(0001) | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | YIELD | - |
dc.subject.keywordAuthor | concurrent passivation | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | protoninjection | - |
dc.subject.keywordAuthor | interface trap | - |
dc.subject.keywordAuthor | sulfur vacancy | - |
dc.subject.keywordAuthor | bulk trap | - |
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