A novel gate driver circuit for depletion-mode a-IGZO TFTs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh J.[Oh J.] | - |
dc.contributor.author | Jung K.-M.[Jung K.-M.] | - |
dc.contributor.author | Lee J.[Lee J.] | - |
dc.contributor.author | Jung E.K.[Jung E.K.] | - |
dc.contributor.author | Jeon J.-H.[Jeon J.-H.] | - |
dc.contributor.author | Park K.[Park K.] | - |
dc.contributor.author | Kim Y.-S.[Kim Y.-S.] | - |
dc.date.accessioned | 2021-07-29T01:25:22Z | - |
dc.date.available | 2021-07-29T01:25:22Z | - |
dc.date.created | 2020-07-13 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.issn | 1071-0922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/13544 | - |
dc.description.abstract | In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a-InGaZnO thin-film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by adopting the negative gate-to-source voltage (VGS) value for pull-down units. The results showed all the VOUT voltage waveforms were maintained at VGH voltage despite depletion-mode operation. The proposed circuit could also obtain stable VOUT voltage when the threshold voltage for all TFTs was changed from −6.5 to +11.5 V. Therefore, the circuit can achieve high reliability regardless of threshold voltage value for a-IGZO TFTs. In addition, the output characteristics and total power consumption were shown for the alternating current (AC)–driven and direct current (DC)–driven methods based on 120-Hz full-HD graphics (1920 × 1080) display panel. The results showed that the AC-driven method could achieve improved VOUT characteristics compared with DC-driven method since the leakage current path for Q node can be completely eliminated. Although power consumption of the AC-driven method can be slightly increased compared with the DC-driven method for enhancement mode, consumption can be lower when the operation has depletion-mode characteristics by preventing a leakage current path for pull-down units. Consequently, the proposed gate driver circuit can overcome the problems caused by the characteristics of a-IGZO TFTs. © 2019 Society for Information Display | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Wiley-Blackwell Publishing Ltd | - |
dc.subject | Computer circuits | - |
dc.subject | Electric impedance measurement | - |
dc.subject | Electric power utilization | - |
dc.subject | Leakage currents | - |
dc.subject | Semiconducting indium compounds | - |
dc.subject | Thin film transistors | - |
dc.subject | Threshold voltage | - |
dc.subject | Timing circuits | - |
dc.subject | a-IGZO TFT | - |
dc.subject | Alternating current | - |
dc.subject | Depletion modes | - |
dc.subject | Gate driver circuit | - |
dc.subject | Output characteristics | - |
dc.subject | Q node | - |
dc.subject | Thin-film transistor (TFTs) | - |
dc.subject | Total power consumption | - |
dc.subject | Thin film circuits | - |
dc.title | A novel gate driver circuit for depletion-mode a-IGZO TFTs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh J.[Oh J.] | - |
dc.contributor.affiliatedAuthor | Jung K.-M.[Jung K.-M.] | - |
dc.contributor.affiliatedAuthor | Lee J.[Lee J.] | - |
dc.contributor.affiliatedAuthor | Jung E.K.[Jung E.K.] | - |
dc.contributor.affiliatedAuthor | Kim Y.-S.[Kim Y.-S.] | - |
dc.identifier.doi | 10.1002/jsid.860 | - |
dc.identifier.scopusid | 2-s2.0-85075351720 | - |
dc.identifier.wosid | 000496473500001 | - |
dc.identifier.bibliographicCitation | Journal of the Society for Information Display, v.27, no.12, pp.776 - 784 | - |
dc.relation.isPartOf | Journal of the Society for Information Display | - |
dc.citation.title | Journal of the Society for Information Display | - |
dc.citation.volume | 27 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 776 | - |
dc.citation.endPage | 784 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Computer circuits | - |
dc.subject.keywordPlus | Electric impedance measurement | - |
dc.subject.keywordPlus | Electric power utilization | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Semiconducting indium compounds | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Timing circuits | - |
dc.subject.keywordPlus | a-IGZO TFT | - |
dc.subject.keywordPlus | Alternating current | - |
dc.subject.keywordPlus | Depletion modes | - |
dc.subject.keywordPlus | Gate driver circuit | - |
dc.subject.keywordPlus | Output characteristics | - |
dc.subject.keywordPlus | Q node | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Total power consumption | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordAuthor | a-IGZO TFT | - |
dc.subject.keywordAuthor | depletion mode | - |
dc.subject.keywordAuthor | gate driver circuit | - |
dc.subject.keywordAuthor | power consumption | - |
dc.subject.keywordAuthor | Q node | - |
dc.subject.keywordAuthor | threshold voltage | - |
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