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Tunnel field-effect transistor with segmented channel
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, J.[Park, J.] | - |
| dc.contributor.author | Shin, C.[Shin, C.] | - |
| dc.date.accessioned | 2021-07-29T04:25:32Z | - |
| dc.date.available | 2021-07-29T04:25:32Z | - |
| dc.date.created | 2019-11-29 | - |
| dc.date.issued | 2019 | - |
| dc.identifier.issn | 2168-6734 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/15108 | - |
| dc.description.abstract | A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its device performance can be improved. Furthermore, the process flow of the Seg-TFET demonstrates a substantiation of the new device structure. Consequently, its current flow is simply defined by adjusting the appropriate contact configuration at metal-zero-level without any additional front-end-of-line process. © 2013 IEEE. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.subject | Electron tunneling | - |
| dc.subject | Corrugated substrates | - |
| dc.subject | Current flows | - |
| dc.subject | Device performance | - |
| dc.subject | Front-end-of-line process | - |
| dc.subject | New devices | - |
| dc.subject | Process flows | - |
| dc.subject | Selective contacts | - |
| dc.subject | Tunnel FET | - |
| dc.subject | Tunnel field effect transistors | - |
| dc.title | Tunnel field-effect transistor with segmented channel | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, J.[Park, J.] | - |
| dc.contributor.affiliatedAuthor | Shin, C.[Shin, C.] | - |
| dc.identifier.doi | 10.1109/JEDS.2019.2919331 | - |
| dc.identifier.scopusid | 2-s2.0-85067185602 | - |
| dc.identifier.wosid | 000471108100002 | - |
| dc.identifier.bibliographicCitation | IEEE Journal of the Electron Devices Society, v.7, no.1, pp.621 - 625 | - |
| dc.relation.isPartOf | IEEE Journal of the Electron Devices Society | - |
| dc.citation.title | IEEE Journal of the Electron Devices Society | - |
| dc.citation.volume | 7 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 621 | - |
| dc.citation.endPage | 625 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Electron tunneling | - |
| dc.subject.keywordPlus | Corrugated substrates | - |
| dc.subject.keywordPlus | Current flows | - |
| dc.subject.keywordPlus | Device performance | - |
| dc.subject.keywordPlus | Front-end-of-line process | - |
| dc.subject.keywordPlus | New devices | - |
| dc.subject.keywordPlus | Process flows | - |
| dc.subject.keywordPlus | Selective contacts | - |
| dc.subject.keywordPlus | Tunnel FET | - |
| dc.subject.keywordPlus | Tunnel field effect transistors | - |
| dc.subject.keywordAuthor | corrugated substrate | - |
| dc.subject.keywordAuthor | Tunnel FET | - |
| dc.subject.keywordAuthor | tunneling | - |
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