Design of front emitter layer for improving efficiency in silicon heterojunction solar cells via numerical calculations
DC Field | Value | Language |
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dc.contributor.author | Kim, S.[Kim, S.] | - |
dc.contributor.author | Park, H.[Park, H.] | - |
dc.contributor.author | 팜뒤퐁[팜뒤퐁] | - |
dc.contributor.author | Kim, Y.[Kim, Y.] | - |
dc.contributor.author | Kim, S.[Kim, S.] | - |
dc.contributor.author | Cho, E.-C.[Cho, E.-C.] | - |
dc.contributor.author | Cho, Y.[Cho, Y.] | - |
dc.contributor.author | Yi, J.[Yi, J.] | - |
dc.date.accessioned | 2021-07-28T06:00:57Z | - |
dc.date.available | 2021-07-28T06:00:57Z | - |
dc.date.created | 2021-06-22 | - |
dc.date.issued | 2021-06 | - |
dc.identifier.issn | 0030-4026 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/1771 | - |
dc.description.abstract | An a-Si:H (p) window layer is used in silicon heterojunction (SHJ) solar cells; however, it is limited by short-circuit current density (JSC). In general, an emitter with a high doping concentration is appropriate for contact with a transparent conducting oxide (TCO); however, it is influenced by side effects such as a reduction of JSC through optical absorption. The conductivity of the emitter is lowered as its doping concentration is reduced, resulting in a decrease in VOC and FF. We investigated p-type emitters such as those made of a-Si:H, a-SiC:H, and μc-SiO:H through film analysis and AFORS-HET simulation to improve the conversion efficiency of the device. Prior to conducting a simulation, a fabricated SHJ solar cell was used to theoretically calculate the precise parameter values. The obtained efficiency was 22.03 % when VOC =730 mV, JSC =39.63 mA/cm2, and FF = 76.13 %. Based on the fitted structure, we conducted experiments to test the emitter materials within a wide band gap and performed a simulation. In the case of μc-SiO:H (p), the achieved efficiency was 24.23 % when VOC =736.6 mV, JSC =40.15 mA/cm2, and FF = 81.93 %. © 2021 Elsevier GmbH | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier GmbH | - |
dc.title | Design of front emitter layer for improving efficiency in silicon heterojunction solar cells via numerical calculations | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S.[Kim, S.] | - |
dc.contributor.affiliatedAuthor | Park, H.[Park, H.] | - |
dc.contributor.affiliatedAuthor | 팜뒤퐁[팜뒤퐁] | - |
dc.contributor.affiliatedAuthor | Kim, Y.[Kim, Y.] | - |
dc.contributor.affiliatedAuthor | Kim, S.[Kim, S.] | - |
dc.contributor.affiliatedAuthor | Cho, E.-C.[Cho, E.-C.] | - |
dc.contributor.affiliatedAuthor | Cho, Y.[Cho, Y.] | - |
dc.contributor.affiliatedAuthor | Yi, J.[Yi, J.] | - |
dc.identifier.doi | 10.1016/j.ijleo.2021.166580 | - |
dc.identifier.scopusid | 2-s2.0-85102119203 | - |
dc.identifier.wosid | 000638107500001 | - |
dc.identifier.bibliographicCitation | Optik, v.235 | - |
dc.relation.isPartOf | Optik | - |
dc.citation.title | Optik | - |
dc.citation.volume | 235 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | Energy gap | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | Light absorption | - |
dc.subject.keywordPlus | Semiconductor doping | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Silicon carbide | - |
dc.subject.keywordPlus | Silicon solar cells | - |
dc.subject.keywordPlus | Transparent conducting oxides | - |
dc.subject.keywordPlus | a-Si:H | - |
dc.subject.keywordPlus | AFORS-HET | - |
dc.subject.keywordPlus | Doping concentration | - |
dc.subject.keywordPlus | Emitter | - |
dc.subject.keywordPlus | Emitter layers | - |
dc.subject.keywordPlus | Heterojunction solar cells | - |
dc.subject.keywordPlus | Higher efficiency | - |
dc.subject.keywordPlus | Improving efficiency | - |
dc.subject.keywordPlus | Silicon heterojunctions | - |
dc.subject.keywordPlus | VIPV | - |
dc.subject.keywordPlus | Efficiency | - |
dc.subject.keywordAuthor | AFORS-HET | - |
dc.subject.keywordAuthor | Emitter | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | High efficiency | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | VIPV | - |
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