Defect-Free Graphene Synthesized Directly at 150 °c via Chemical Vapor Deposition with No Transfer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, B.-J.[Park, B.-J.] | - |
dc.contributor.author | Choi, J.-S.[Choi, J.-S.] | - |
dc.contributor.author | Eom, J.-H.[Eom, J.-H.] | - |
dc.contributor.author | Ha, H.[Ha, H.] | - |
dc.contributor.author | Kim, H.Y.[Kim, H.Y.] | - |
dc.contributor.author | Lee, S.[Lee, S.] | - |
dc.contributor.author | Shin, H.[Shin, H.] | - |
dc.contributor.author | Yoon, S.-G.[Yoon, S.-G.] | - |
dc.date.accessioned | 2021-07-30T02:26:02Z | - |
dc.date.available | 2021-07-30T02:26:02Z | - |
dc.date.created | 2018-04-10 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/25659 | - |
dc.description.abstract | Direct graphene synthesis on substrates via chemical vapor deposition (CVD) is an attractive approach for manufacturing flexible electronic devices. The temperature for graphene synthesis must be below ∼200 °C to prevent substrate deformation while fabricating flexible devices on plastic substrates. Herein, we report a process whereby defect-free graphene is directly synthesized on a variety of substrates via the introduction of an ultrathin Ti catalytic layer, due to the strong affinity of Ti to carbon. Ti with a thickness of 10 nm was naturally oxidized by exposure to air before and after the graphene synthesis, and the various functions of neither the substrates nor the graphene were influenced. This report offers experimental evidence of high-quality graphene synthesis on Ti-coated substrates at 150 °C via CVD. The proposed methodology was applied to the fabrication of flexible and transparent thin-film capacitors with top electrodes of high-quality graphene. © 2018 American Chemical Society. | - |
dc.publisher | American Chemical Society | - |
dc.subject | Buffer layers | - |
dc.subject | Carbon | - |
dc.subject | Chemical vapor deposition | - |
dc.subject | Defects | - |
dc.subject | Deposition | - |
dc.subject | Graphene | - |
dc.subject | Graphene devices | - |
dc.subject | Nobelium | - |
dc.subject | Transparent electrodes | - |
dc.subject | Vapor deposition | - |
dc.subject | Chemical vapor depositions (CVD) | - |
dc.subject | Defect-free | - |
dc.subject | Flexible electronic devices | - |
dc.subject | Flexible substrate | - |
dc.subject | Substrate deformation | - |
dc.subject | Synthesis temperatures | - |
dc.subject | Ti buffer layers | - |
dc.subject | Transparent thin film | - |
dc.subject | Substrates | - |
dc.title | Defect-Free Graphene Synthesized Directly at 150 °c via Chemical Vapor Deposition with No Transfer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, S.[Lee, S.] | - |
dc.contributor.affiliatedAuthor | Shin, H.[Shin, H.] | - |
dc.identifier.doi | 10.1021/acsnano.8b00015 | - |
dc.identifier.scopusid | 2-s2.0-85042692562 | - |
dc.identifier.wosid | 000426615600114 | - |
dc.identifier.bibliographicCitation | ACS Nano, v.12, no.2, pp.2008 - 2016 | - |
dc.relation.isPartOf | ACS Nano | - |
dc.citation.title | ACS Nano | - |
dc.citation.volume | 12 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 2008 | - |
dc.citation.endPage | 2016 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MONOLAYER GRAPHENE | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | REALIZATION | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | NICKEL | - |
dc.subject.keywordAuthor | direct graphene synthesis via CVD | - |
dc.subject.keywordAuthor | Ti buffer layer | - |
dc.subject.keywordAuthor | flexible substrate | - |
dc.subject.keywordAuthor | synthesis temperature of 150 degrees C | - |
dc.subject.keywordAuthor | defect-free monolayer graphene | - |
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