Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles
DC Field | Value | Language |
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dc.contributor.author | Lee D.-H.[Lee D.-H.] | - |
dc.contributor.author | Kim J.-M.[Kim J.-M.] | - |
dc.contributor.author | Lim K.-T.[Lim K.-T.] | - |
dc.contributor.author | Cho H.J.[Cho H.J.] | - |
dc.contributor.author | Bang J.H.[Bang J.H.] | - |
dc.contributor.author | Kim Y.-S.[Kim Y.-S.] | - |
dc.date.accessioned | 2021-07-31T20:46:03Z | - |
dc.date.available | 2021-07-31T20:46:03Z | - |
dc.date.created | 2016-08-07 | - |
dc.date.issued | 2016-03 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/37582 | - |
dc.description.abstract | In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices. | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | ORGANIC SOLAR-CELLS | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | SONOS | - |
dc.title | Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles | - |
dc.title.alternative | Investing the Effectiveness of Retention Performance in a Non-Volatile Floating Gate Memory Device with a Core-Shell Structure of CdSe Nanoparticles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee D.-H.[Lee D.-H.] | - |
dc.contributor.affiliatedAuthor | Lim K.-T.[Lim K.-T.] | - |
dc.contributor.affiliatedAuthor | Cho H.J.[Cho H.J.] | - |
dc.contributor.affiliatedAuthor | Kim Y.-S.[Kim Y.-S.] | - |
dc.identifier.doi | 10.1007/s13391-016-5387-8 | - |
dc.identifier.scopusid | 2-s2.0-84960086797 | - |
dc.identifier.wosid | 000371469600013 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.12, no.2, pp.276 - 280 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 276 | - |
dc.citation.endPage | 280 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002089466 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
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