Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, P[Choi, Pyungho] | - |
dc.contributor.author | Lee, S[Lee, Sangmin] | - |
dc.contributor.author | Kim, H[Kim, Hyojung] | - |
dc.contributor.author | Park, J[Park, Jungmin] | - |
dc.contributor.author | Choi, B[Choi, Byoungdeog] | - |
dc.date.accessioned | 2021-07-28T09:26:07Z | - |
dc.date.available | 2021-07-28T09:26:07Z | - |
dc.date.created | 2020-10-05 | - |
dc.date.issued | 2020-06 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/4103 | - |
dc.description.abstract | In this study, the transfer characteristics of InGaZnO (IGZO) and InSnZnO (ISZO) thin-film transistors are compared using the minority carrier generation lifetime method. Capacitance-voltage and capacitance-time characteristics of IGZO- and ISZO-based capacitors with a p(+)-Si/SiO2/IGZO or ISZO structure were evaluated at a 100 kHz frequency. Although the intrinsic carrier concentrations of IGZO and ISZO films are on the order of similar to 10(-7 )CM(-3), which is conjectured to result in a very low off-state drain current (I-D,I-OFF), even as small as zero, a magnitude of 10(-12) - 10(-11) A for I-D,I-OFF was measured in this study. We propose that this is due to the minority carriers, which are thermally generated from the channel defects. Furthermore, ISZO films exhibited faster transient capacitance characteristics compared to the IGZO films, which is associated with the amount of defect sites in the channel substrate. Thus, the lower transient time for the ISZO films is attributed to a larger number of oxygen vacancies in the channel layer than in IGZO films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Evaluation of Minority Carrier Generation Lifetime for Oxide Semiconductors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, P[Choi, Pyungho] | - |
dc.contributor.affiliatedAuthor | Lee, S[Lee, Sangmin] | - |
dc.contributor.affiliatedAuthor | Choi, B[Choi, Byoungdeog] | - |
dc.identifier.doi | 10.1016/j.tsf.2020.138023 | - |
dc.identifier.scopusid | 2-s2.0-85083516234 | - |
dc.identifier.wosid | 000533600100003 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.704 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 704 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordAuthor | Oxide semiconductors | - |
dc.subject.keywordAuthor | Indium gallium zinc oxide | - |
dc.subject.keywordAuthor | Indium tin zinc oxide | - |
dc.subject.keywordAuthor | Transient capacitance | - |
dc.subject.keywordAuthor | Carrier generation lifetime | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu
COPYRIGHT © 2021 SUNGKYUNKWAN UNIVERSITY ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.