Dual Bias Modulator for Envelope Tracking and Average Power Tracking Modes for CMOS Power Amplifier
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정해련[정해련] | - |
dc.contributor.author | 배종석[배종석] | - |
dc.contributor.author | 임원섭[임원섭] | - |
dc.contributor.author | 황금철[황금철] | - |
dc.contributor.author | 이강윤[이강윤] | - |
dc.contributor.author | 박천석[박천석] | - |
dc.contributor.author | 양영구[양영구] | - |
dc.contributor.author | 함정현[함정현] | - |
dc.date.accessioned | 2021-08-03T22:46:34Z | - |
dc.date.available | 2021-08-03T22:46:34Z | - |
dc.date.created | 2019-12-02 | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/55154 | - |
dc.description.abstract | This paper presents a dual-mode bias modulator (BM) for complementary metal oxide semiconductor (CMOS) power amplifiers (PAs). The BM includes a hybrid buck converter and a normal buck converter for an envelope tracking (ET) mode for high output power and for an average power tracking (APT) mode for low output power, respectively. The dual-mode BM and CMOS PA are designed using a 0.18-m CMOS process for the 1.75 GHz band. For the 16-QAM LTE signal with a peak-to-average power ratio of 7.3 dB and a bandwidth of 5 MHz, the PA with the ET mode exhibited a power-added efficiency (PAE) of 39.2%, an EVM of 4.8%, a gain of 19.0 dB, and an adjacent channel leakage power ratio of -30 dBc at an average output power of 22 dBm, while the stand-alone PA has a PAE of 8% lower at the same condition. The PA with APT mode has a PAE of 21.3%, which is an improvement of 13.4% from that of the stand-alone PA at an output power of 13 dBm. | - |
dc.publisher | 대한전자공학회 | - |
dc.subject | Power amplifier | - |
dc.subject | dual-mode bias modulator | - |
dc.subject | envelope tracking | - |
dc.subject | average power tracking | - |
dc.subject | long-term evolution | - |
dc.title | Dual Bias Modulator for Envelope Tracking and Average Power Tracking Modes for CMOS Power Amplifier | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 정해련[정해련] | - |
dc.contributor.affiliatedAuthor | 배종석[배종석] | - |
dc.contributor.affiliatedAuthor | 임원섭[임원섭] | - |
dc.contributor.affiliatedAuthor | 황금철[황금철] | - |
dc.contributor.affiliatedAuthor | 이강윤[이강윤] | - |
dc.contributor.affiliatedAuthor | 박천석[박천석] | - |
dc.contributor.affiliatedAuthor | 양영구[양영구] | - |
dc.contributor.affiliatedAuthor | 함정현[함정현] | - |
dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.6, pp.802 - 809 | - |
dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.citation.volume | 14 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 802 | - |
dc.citation.endPage | 809 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART001940939 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordPlus | Power amplifier | - |
dc.subject.keywordPlus | dual-mode bias modulator | - |
dc.subject.keywordPlus | envelope tracking | - |
dc.subject.keywordPlus | average power tracking | - |
dc.subject.keywordPlus | long-term evolution | - |
dc.subject.keywordAuthor | Power amplifier | - |
dc.subject.keywordAuthor | dual-mode bias modulator | - |
dc.subject.keywordAuthor | envelope tracking | - |
dc.subject.keywordAuthor | average power tracking | - |
dc.subject.keywordAuthor | long-term evolution | - |
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