Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide
DC Field | Value | Language |
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dc.contributor.author | Jang, J[Jang, Jingon] | - |
dc.contributor.author | Yoon, Y[Yoon, Yeoheung] | - |
dc.contributor.author | Jeong, H[Jeong, Hyunhak] | - |
dc.contributor.author | Lee, H[Lee, Hyungwoo] | - |
dc.contributor.author | Song, Y[Song, Younggul] | - |
dc.contributor.author | Cho, K[Cho, Kyungjune] | - |
dc.contributor.author | Hong, S[Hong, Seunghun] | - |
dc.contributor.author | Lee, H[Lee, Hyoyoung] | - |
dc.contributor.author | Lee, T[Lee, Takhee] | - |
dc.date.accessioned | 2021-08-04T12:56:07Z | - |
dc.date.available | 2021-08-04T12:56:07Z | - |
dc.date.created | 2016-08-06 | - |
dc.date.issued | 2013-09-02 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/59359 | - |
dc.description.abstract | We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be similar to 1 Omega/square, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082 cm(2)/V.s to 0.141 cm(2)/V.s. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | MORPHOLOG | - |
dc.title | Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Y[Yoon, Yeoheung] | - |
dc.contributor.affiliatedAuthor | Lee, H[Lee, Hyoyoung] | - |
dc.identifier.doi | 10.1016/j.tsf.2013.07.008 | - |
dc.identifier.scopusid | 2-s2.0-84881310535 | - |
dc.identifier.wosid | 000323859400055 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.542, pp.327 - 331 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 542 | - |
dc.citation.startPage | 327 | - |
dc.citation.endPage | 331 | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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