Synthesis and properties of triangular-shaped GaN nanorods via growth mode control
DC Field | Value | Language |
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dc.contributor.author | Kang, SM[Kang, S. M.] | - |
dc.contributor.author | Shin, TI[Shin, T. I.] | - |
dc.contributor.author | Dihn, DV[Dihn, D. V.] | - |
dc.contributor.author | Yang, JH[Yang, J. H.] | - |
dc.contributor.author | Kim, SW[Kim, S. -W.] | - |
dc.contributor.author | Yoon, DH[Yoon, D. H.] | - |
dc.date.accessioned | 2021-08-07T05:47:32Z | - |
dc.date.available | 2021-08-07T05:47:32Z | - |
dc.date.created | 2016-10-20 | - |
dc.date.issued | 2009-01-15 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/78653 | - |
dc.description.abstract | The synthesis of wurtzite gallium nitride (GaN) nanorods with triangular shape on c-Al(2)O(3) substrates using a thermal chemical vapor deposition process was investigated. It was possible to control nanorod shape and growth mode of GaN nanorods by change of sample geometry in the chamber using a mixture of GaN powder and Ga metal with ammonia gas reaction. It was found that the GaN nanorods were grown via both vapor-liquid-solid and vapor-solid mode with change of sample placement in the chamber. The morphology of the GaN nanorods was observed by field-emission scanning electron microscopy in secondary electron and back-scattered electron mode. High-resolution transmission electron microscopy, and X-ray scattering measurements revealed the GaN nanorods to have a single-crystalline wurtzite structure. (C) 2008 Elsevier B.V. All rights reserved. | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | GALLIUM NITRIDE NANOWIRES | - |
dc.subject | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject | CATALYTIC SYNTHESIS | - |
dc.subject | LASER | - |
dc.subject | NANOSTRUCTURES | - |
dc.title | Synthesis and properties of triangular-shaped GaN nanorods via growth mode control | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, SM[Kang, S. M.] | - |
dc.contributor.affiliatedAuthor | Shin, TI[Shin, T. I.] | - |
dc.contributor.affiliatedAuthor | Dihn, DV[Dihn, D. V.] | - |
dc.contributor.affiliatedAuthor | Yang, JH[Yang, J. H.] | - |
dc.contributor.affiliatedAuthor | Yoon, DH[Yoon, D. H.] | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2008.09.047 | - |
dc.identifier.scopusid | 2-s2.0-59749106403 | - |
dc.identifier.wosid | 000264161700016 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.311, no.3, pp.490 - 494 | - |
dc.relation.isPartOf | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 311 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 490 | - |
dc.citation.endPage | 494 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | GALLIUM NITRIDE NANOWIRES | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | CATALYTIC SYNTHESIS | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordPlus | NANOSTRUCTURES | - |
dc.subject.keywordAuthor | Crystal morphology | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Chemical vapor deposition processes | - |
dc.subject.keywordAuthor | Semiconducting III-V materials | - |
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