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Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy

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dc.contributor.authorJung, S.I.[Jung, S.I.]-
dc.contributor.authorYeo, H.Y.[Yeo, H.Y.]-
dc.contributor.authorYun, I.[Yun, I.]-
dc.contributor.authorHan, I.K.[Han, I.K.]-
dc.contributor.authorCho, S.M.[Cho, S.M.]-
dc.contributor.authorLee, J.I.[Lee, J.I.]-
dc.date.accessioned2021-08-08T04:43:55Z-
dc.date.available2021-08-08T04:43:55Z-
dc.date.created2017-01-12-
dc.date.issued2007-
dc.identifier.urihttps://scholarworks.bwise.kr/skku/handle/2021.sw.skku/85690-
dc.titleNear-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy-
dc.typeArticle-
dc.contributor.affiliatedAuthorCho, S.M.[Cho, S.M.]-
dc.identifier.scopusid2-s2.0-34147169381-
dc.identifier.bibliographicCitationJournal of the Korean Physical Society, v.50, no.3, pp.763 - 766-
dc.relation.isPartOfJournal of the Korean Physical Society-
dc.citation.titleJournal of the Korean Physical Society-
dc.citation.volume50-
dc.citation.number3-
dc.citation.startPage763-
dc.citation.endPage766-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass3-
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