SiO2 films deposited at low temperature by using APCVD with TEOS/O-3 for TFT applications
DC Field | Value | Language |
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dc.contributor.author | Kim, J[Kim, Junsik] | - |
dc.contributor.author | Hwang, S[Hwang, Sunghyun] | - |
dc.contributor.author | Yi, JS[Yi, Junsin] | - |
dc.date.accessioned | 2021-08-08T08:43:01Z | - |
dc.date.available | 2021-08-08T08:43:01Z | - |
dc.date.created | 2016-11-25 | - |
dc.date.issued | 2006-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/86820 | - |
dc.description.abstract | A silicon-dioxide (SiO2) film was deposited using tetra ethyl orthosilicate (TEOS) along with oxygen (O-2) or ozone (O-3) as a reaction gas in an atmospheric pressure chemical vapor deposition (APCVD) system instead of using a hazardous gas like SiH4. h was impossible to grow the film below 500 degrees C by using O-2 as a reaction gas. The films deposited at 400 degrees C using O-3 as a reaction gas showed the best deposition rate and electrical and optical properties good enough to make them applicable for many semiconductor devices, especially poly-silicon (poly-Si) thin-film transistors (TFTs). The annealing of the films at 700 degrees C. was found to reduce the interface defect density, making the film more useful as a passivation layer. Conventional APCVD requires high-temperature processing whereas in the current study, we developed a low-temperature process. The interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in an air ambient. | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | SiO2 films deposited at low temperature by using APCVD with TEOS/O-3 for TFT applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, J[Kim, Junsik] | - |
dc.contributor.affiliatedAuthor | Hwang, S[Hwang, Sunghyun] | - |
dc.contributor.affiliatedAuthor | Yi, JS[Yi, Junsin] | - |
dc.identifier.wosid | 000240570400058 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.49, no.3, pp.1121 - 1125 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 49 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1121 | - |
dc.citation.endPage | 1125 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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