A high efficiency variable stage and frequency charge pump for wide range ISPP
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, S.-W.[Kim, S.-W.] | - |
dc.contributor.author | Yang, J.-H.[Yang, J.-H.] | - |
dc.contributor.author | Park, E.-J.[Park, E.-J.] | - |
dc.contributor.author | Choi, J.-M.[Choi, J.-M.] | - |
dc.contributor.author | Kwon, K.-W.[Kwon, K.-W.] | - |
dc.date.accessioned | 2021-12-28T20:53:04Z | - |
dc.date.available | 2021-12-28T20:53:04Z | - |
dc.date.created | 2021-10-12 | - |
dc.date.issued | 2020 | - |
dc.identifier.issn | 0271-4310 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/skku/handle/2021.sw.skku/93826 | - |
dc.description.abstract | In this paper, an accurate boosted power supply is proposed for various voltage levels required in incremental step pulse programming technique for fine control of memory cell threshold voltage throughout wide range of output voltages. In addition, during the boosting process, the frequency of the pumping clock and the number of pumping stages can be adaptively adjusted simultaneously to maintain the optimum power efficiency. The charge pump proposed in this paper is designed with 180nm CMOS process. It occupies an area of 0.199mm2 and operates on a 3.3V supply. It can generate 8 levels of incremental step pulse programming voltage(9.68 ~ 12.5V), the average ripple voltage is about 0.13V and the average efficiency is 15.6%. © 2020 IEEE | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | A high efficiency variable stage and frequency charge pump for wide range ISPP | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S.-W.[Kim, S.-W.] | - |
dc.contributor.affiliatedAuthor | Yang, J.-H.[Yang, J.-H.] | - |
dc.contributor.affiliatedAuthor | Park, E.-J.[Park, E.-J.] | - |
dc.contributor.affiliatedAuthor | Choi, J.-M.[Choi, J.-M.] | - |
dc.contributor.affiliatedAuthor | Kwon, K.-W.[Kwon, K.-W.] | - |
dc.identifier.scopusid | 2-s2.0-85109329605 | - |
dc.identifier.bibliographicCitation | Proceedings - IEEE International Symposium on Circuits and Systems, v.2020-October | - |
dc.relation.isPartOf | Proceedings - IEEE International Symposium on Circuits and Systems | - |
dc.citation.title | Proceedings - IEEE International Symposium on Circuits and Systems | - |
dc.citation.volume | 2020-October | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Efficiency | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordPlus | Average efficiencies | - |
dc.subject.keywordPlus | High-efficiency | - |
dc.subject.keywordPlus | Output voltages | - |
dc.subject.keywordPlus | Power efficiency | - |
dc.subject.keywordPlus | Programming technique | - |
dc.subject.keywordPlus | Programming voltage | - |
dc.subject.keywordPlus | Ripple voltage | - |
dc.subject.keywordPlus | Voltage levels | - |
dc.subject.keywordPlus | Charge pump circuits | - |
dc.subject.keywordAuthor | Charge pump | - |
dc.subject.keywordAuthor | Flash memories | - |
dc.subject.keywordAuthor | Incremental-step-pulse-programming (ISPP) | - |
dc.subject.keywordAuthor | Variable frequency | - |
dc.subject.keywordAuthor | Variable stage | - |
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