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Fluorine-doped indium gallium zinc oxide thin-film transistors fabricated via solution process

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dc.contributor.authorChoi, D.[Choi, D.]-
dc.contributor.authorChoi, B.[Choi, B.]-
dc.date.accessioned2021-12-28T20:55:48Z-
dc.date.available2021-12-28T20:55:48Z-
dc.date.created2021-09-17-
dc.date.issued2019-
dc.identifier.issn1883-2490-
dc.identifier.urihttps://scholarworks.bwise.kr/skku/handle/2021.sw.skku/93962-
dc.description.abstractFluorine-doped indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) were fabricated using a sol-gel process. The devices showed the enhanced electrical properties of Vth, saturation mobility, subthreshold swing and positive bias stress (PBS) stability with an incorporation of the fluorine into the IGZO channel layer. This may be attributed the effect of fluorine doping. It generates the free electron by replacing the oxygen atoms and decreases the total trap states (NT) by occupying the oxygen vacancies. © 2019 ITE and SID.-
dc.language영어-
dc.language.isoen-
dc.publisherInternational Display Workshops-
dc.subjectElectrons-
dc.subjectFabrication-
dc.subjectGallium compounds-
dc.subjectII-VI semiconductors-
dc.subjectSemiconducting indium compounds-
dc.subjectSemiconductor doping-
dc.subjectSol-gel process-
dc.subjectThin film circuits-
dc.subjectThin films-
dc.subjectZinc oxide-
dc.subjectChannel layers-
dc.subjectFluorine doping-
dc.subjectFluorine-doped-
dc.subjectFree electron-
dc.subjectIndium gallium zinc oxides-
dc.subjectSaturation mobility-
dc.subjectSolution process-
dc.subjectSubthreshold swing-
dc.subjectThin film transistors-
dc.titleFluorine-doped indium gallium zinc oxide thin-film transistors fabricated via solution process-
dc.typeArticle-
dc.contributor.affiliatedAuthorChoi, D.[Choi, D.]-
dc.contributor.affiliatedAuthorChoi, B.[Choi, B.]-
dc.identifier.scopusid2-s2.0-85105352258-
dc.identifier.bibliographicCitationProceedings of the International Display Workshops, v.2, pp.527 - 529-
dc.relation.isPartOfProceedings of the International Display Workshops-
dc.citation.titleProceedings of the International Display Workshops-
dc.citation.volume2-
dc.citation.startPage527-
dc.citation.endPage529-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusElectrons-
dc.subject.keywordPlusFabrication-
dc.subject.keywordPlusGallium compounds-
dc.subject.keywordPlusII-VI semiconductors-
dc.subject.keywordPlusSemiconducting indium compounds-
dc.subject.keywordPlusSemiconductor doping-
dc.subject.keywordPlusSol-gel process-
dc.subject.keywordPlusThin film circuits-
dc.subject.keywordPlusThin films-
dc.subject.keywordPlusZinc oxide-
dc.subject.keywordPlusChannel layers-
dc.subject.keywordPlusFluorine doping-
dc.subject.keywordPlusFluorine-doped-
dc.subject.keywordPlusFree electron-
dc.subject.keywordPlusIndium gallium zinc oxides-
dc.subject.keywordPlusSaturation mobility-
dc.subject.keywordPlusSolution process-
dc.subject.keywordPlusSubthreshold swing-
dc.subject.keywordPlusThin film transistors-
dc.subject.keywordAuthorDoping effect-
dc.subject.keywordAuthorFluorine-
dc.subject.keywordAuthorIGZO TFTs-
dc.subject.keywordAuthorSolution process-
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