ScholarWorks@SUNGKYUNKWAN UNIVERSITY: KIM, SO YOUNG

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KIM, SO YOUNG (김소영)

Information and Communication Engineering (Semiconductor Systems Engineering)

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EMI:11||FinFET:6||compact model:5||Antenna:4||Electromagnetic interference (EMI):4||noise immunity:4||electromagnetic interference (EMI):4||CMOS:3||antenna:3||3D EM simulation:3||hysteresis:3||Electromagnetic compatibility (EMC):3||transmission line:3||EMC:3||electromagnetic compatibility (EMC):3||fringe capacitance:3||Jitter:3||I/O buffers:3||SPICE:3||printed circuit board (PCB):2||eye diagram:2||Schmitt Trigger:2||radio frequency (RF):2||farfield:2||IC stripline:2||fin fieldeffect transistors (FinFETs):2||flexible and printed electronics:2||flexible printed circuit board:2||artificial neural network:2||artificial neural network (ANN):2||ring oscillator:2||rolltoroll:2||Compact model:2||gravure:2||semicustom digital design:2||Electrostatic potential:2||bulk current injection (BCI):2||impedance discontinuity:2||slew rate:2||CMOS integrated circuit:2||Insulator:2||integrated circuits:2||circuit simulation:2||BCI:2||loosely coupled:2||sudden power off:2||machine learning:2||machine learning (ML):2||system in package:2||meander line:2||Circuit model:2||tightly coupled:2||mesh ground:2||FinFETs:2||crosstalk:2||Artificial neural network (ANN):2||Cutoff frequency:2||Analytical model:2||DCDC buck converter:2||voltage controlled oscillator:2||DCDC converter:2||Bulk current injection (BCI):2||multilevel signal:2||differential transmission line:2||digital circuit:2||MBCFET:2||direct power injection (DPI):2||Gate controllability:2||nearfield:2||Gateallaround FET:2||number of fins:2||number of gate fingers:2||Geometric Programming:2||Radio frequency interference (RFI):2||Transistor leakage:2||Geometric programming:2||EMC qualification:2||SParameter:2||parasitic resistance:2||Transmission line:2||electromagnetic interference:2||Transmitter:2||pathfinding:2||phase noise:2||power distribution network (PDN):2||power integrity (PI):2||powersupply rejection (PSR):2||Integrated circuits:1||Integrated voltage regulator (IVR):1||Interconnect:1||Junctions:1||LDO Regulator:1||Liion:1||Low Power:1||Low dropout (LDO) regulator:1||Lowprofile capacitor:1||MIPI CPHY:1||Metal:1||Metal gate:1||Microstrip Coupler:1||Mobile Charging Circuit:1||Mobile Highdefinition Link (MHL):1||Mobile phone:1||NanoSheet Transistor:1||Nanosheet transistor:1||NearField :1||Noise Immunity:1||Optimization:1||PCB:1||PDN:1||PSRR:1||Package:1||Parasitic capacitance:1||Parasitic resistance:1||Parasitic source/drain resistance and capacitance:1||Phase Noise:1||Phase noise:1||Power delivery network:1||Power management IC (PMIC):1||Power noise:1||PowerSupply Rejection(PSR):1||Powersupply rejection (PSR):1||Prediction:1||Predictive models:1||Printed circuit board (PCB):1||Process variations:1||RF immunity:1||RFI:1||Radio Frequency Interference (RFI):1||Radio frequency Interference (RFI):1||Receiver:1||Receivers:1||Sparameter:1||S/W failure:1||SOH:1||Scattering parameter measurement:1||Schmitt trigger:1||SemiCustom Verification:1||Sensing circuit:1||Serializer:1||Shield:1||Shielding can:1||Shielding effectiveness:1||Short Channel Effect:1||Signal integrity:1||Slew rate:1||Smartphone:1||Solenoid inductor:1||Stability:1||Structural rings:1||Switching current:1||Synchronous DCDC buck converter:1||System in Package(SiP):1||TCAD:1||TCAD/SPICE simulation:1||TEMcell:1||Thermal Resistance:1||Threedimensional displays:1||Threshold voltage:1||TiN thickness:1||Transeverse electromagnetic (TEM) cell:1||Transistors:1||Transition Minimized Dipslay Signaling(TMDS):1||Transmission Lines:1||User Pattern:1||VNAND flash memory:1||VCO:1||VTMOS:1||Wide frequency range:1||Wide tuning r:1||aperture:1||bandstop filter:1||binning:1||bit error rate:1||buried oxide nanosheet fieldeffect transistor (BONSFET):1||chaotic PWM:1||circuit immunity:1||common mode noise:1||compact modeling:1||contact:1||coplanar meander lines:1||coupling noise:1||damping resistor:1||delaylocked loop (DLL):1||design automation:1||designtechnology cooptimization (DTCO):1||device modeling:1||differential mode noise:1||differential signal:1||digital logic circuit:1||digital switching signal:1||dual material gate:1||dual workfunction:1||effects of geometrical parameters:1||elctromagnetic susceptibility:1||electrical die sorting:1||electrom:1||electromagnetic bandgap(EBG) structure:1||electromagnetic immunity:1||electromagnetic interferece(EMI):1||electromagnetic susceptibility:1||embedded inductor:1||emerging device:1||energyefficient:1||epitaxy:1||equivalent circuit:1||fail bit map data:1||fanout wafer level package (FOWLP):1||fieldprogrammable g:1||fourport VNA:1||frequency hopping:1||gateinduced drain leakage (GIDL)assisted erase:1||highk/metal gate:1||immunity:1||impedance:1||impulse sensitivity function:1||integrated circuit (IC):1||integrated circuit (IC) package:1||interstage voltage swing optimization:1||kband:1||low dropout (LDO) regulator:1||lowdropout (LDO) regulator:1||meander perforatedplane(MPP):1||meanderline:1||metal gate:1||millimeterwave:1||millisecond annealing:1||mixers:1||mode transition:1||modeling:1||modelparameter extraction (MPE):1||multiport device:1||multifin:1||nano:1||nanosheet FET (NSFET):1||nanosheet FETs:1||nanosheet fieldeffect transistor (NSFET):1||nanosheet fieldeffect transistors (NSFETs):1||negative capacitance NSFET (NCNSFET):1||noise reduction:1||numerical modeling:1||offchip interconnect:1||onchip decoupling capacitor:1||optimal clock edgerate:1||parameter extraction:1||parasitic:1||parasitic capa:1||parasitic resistance and capacitance (RC):1||parasitic source/drain (S/D) resistance:1||pass transistor:1||passive equalization:1||phaseint:1||polySi:1||power transfer efficiency:1||powergating:1||pruning:1||pulseamplitude modulation fourlevel (PAM4):1||quality factor:1||radiative noise:1||radio frequency interference (RFI):1||read margin:1||rectangularshaped fin:1||rectifier:1||redistribution layer (RDL):1||relaxation oscillator:1||renormalization:1||ringing noise:1||segmentation me:1||semiconductor:1||seriallink transmitter:1||series resistance:1||sheet transistor:1||shielding:1||signal integrity:1||size reduction:1||smartphone:1||snubber:1||spreadspectrum technique:1||stan:1||stress:1||substrate leakage optimizing:1||switchable metaloxidemetal capacitor:1||switched capacitor array:1||switching mode dcdc converter:1||system entity structure:1||temperature coefficient:1||temperature compensation:1||timetodigital converter (TDC):1||transistor:1||transition frequency:1||transmitter:1||triangular ramp generator:1||triangularshaped fin:1||twostage opamp:1||under voltage lockout (UVLO):1||undervoltage lockout (UVLO):1||voltage reference:1||wide input range:1||wideband:1||wireless battery char:1||고속 시리얼 링크 전송회로:1||신호지연:1||압축모델:1||자동화 설계 틀:1||3D solenoid inductor:1||전류 모드 논리 게이트:1||3D vertically integrated nand (VNAND) flash memory:1||AC Power Line:1||Acceleration:1||Active capacitor:1||Adder:1||Alldigital phaselocked loop (A:1||AntennaTransmission Line:1||Artificial neural networks:1||Automotive radar:1||BEOL corner model:1||BSIMCMG:1||Bandtoband tunneling (BTBT):1||Bandgap reference (BGR):1||Bandstop filter:1||Battery:1||Bit error rate:1||Bulk Current Injection:1||CMOS chaotic circuit:1||CRLHTL:1||Camera:1||Circuit simulation:1||Clock and:1||Commonmode filter:1||Convex Optimization:1||Coplanar symmetrical meander lines:1||Couplings:1||Crosstalk:1||Current Injection Probe:1||Currentmode logic gates:1||Currentmode relaxation oscillator:1||Cyclic:1||DDR4:1||DPI:1||DTMOS:1||DTMOS Schmitt Trigger:1||Decoupling capacitor:1||Defected Ground Structure:1||Delay model:1||Delaylocked loop:1||Differential signaling:1||Digital circuits:1||Disturbance Noise Power:1||Dual material gate:1||Dual workfunction:1||EFT/B Immunity Test:1||EMI (Electromagnetic Interference):1||EMI filter:1||EMI measurement:1||EMI reduction:1||EMS:1||ESD coupling:1||ESD detection:1||Earend crosstalk:1||Effective gate resistance:1||Electrical Oscillator:1||Electromagnetic Susceptibility:1||Electromagnetic Susceptibility (EMS):1||Electromagnetic bandgap (EBG):1||Electromagnetic bandgap (EBG) structure:1||Electromagnetic compatibility:1||Electromagnetic compatibility (EMC), antenna, smartphone:1||Electromagnetic interference(EMI) noise:1||Electromagnetic susceptibility (EMS):1||Embedded capacitor:1||Equalizers:1||FM radio:1||FSK:1||Farfield:1||Flash memories:1||Flexible PCB (FPCB):1||Flexible printed circuit board (FPCB):1||Frequency Hopping:1||GAAFET:1||GIDLassisted erase:1||Gate Controllability:1||Ground bounce:1||Hysteresis Characteristic:1||I/O buffer:1||I/O driver:1||ICStripline:1||ICs:1||Impedance:1||Impedance mismatch:1||Impulse Sensitivity Function:1||Integrated circuit (IC):1||Integrated circuit modeling:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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