ScholarWorks@SUNGKYUNKWAN UNIVERSITY: GHERGHEREHCHI, MITRA

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GHERGHEREHCHI, MITRA (미트라게게르치)

Information and Communication Engineering (Electronic and Electrical Engineering)

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Cyclotron:6||RF cavity:5||2D materials:4||electronic properties:4||firstprinciples calculations:3||Mechanical properties:3||Accelerator mass spectrometry:3||Atomic doping:3||Electrooptic properties:3||ArF laser:3||Damage to bulk:2||Electric field:2||Beam dynamics:2||Pulse integration:2||Coupling coefficient:2||Janus monolayers:2||TOSCA:2||NQR signal processing:2||CST:2||density functional theory:2||Electromagnetic field simulation:2||Electron linac:2||Nonionizing energy loss:2||Electronic and magnetic properties:2||W/Si preshower:2||Xband:2||Genetic algorithm:2||Resonant frequency:2||Electronic structure:2||firstprinciples study:2||DFT:2||Si MiniPad:2||MoSi2N4 monolayer:2||ChildLangmuir law:1||Circuit modeling:1||Cone structure:1||Conversion electrons:1||Crosslinked:1||Cu microwire:1||Cyclotron Magnet design:1||DAQ:1||DFT simulation:1||Data analysis system:1||Defect and strain engineering:1||Density Functional Theory:1||Density functional theory:1||Dielectric loaded accelerator:1||Dielectrics:1||Dirac halfmetal:1||Dirac semimetal:1||Diracsemimetal:1||Double layer hexagonal structure:1||Electrooptical and mechanical properties:1||Electrooptical properties:1||Electrochemical deposition:1||Electrodeposition:1||Electron temperature control:1||Electronic and optical properties:1||Elliptical tube:1||Etching:1||FCNN:1||FDG and NAF radiopharmaceutical:1||FTIR spectra:1||FirstPrinciples calculations:1||Firstprinciple calculations:1||Firstprinciple study:1||Firstprinciples calculations:1||Firstprinciples study:1||Fringe:1||Functionalization:1||Gammaray spectroscopy:1||Geiger Muller counter:1||HPGe detector:1||Hall sensor:1||High power tunable attenuator (HPTA):1||Highly enriched water:1||Hybrid photoneutron:1||Impedance matching:1||Impurity of atom:1||Interference suppression:1||Ion track:1||Isochronous cyclotron:1||KTTMS:1||LabVIEW:1||Linear servomotor:1||MPC:1||MXene:1||MXenes:1||Magnet:1||Magnetic field measurement:1||Mass spectrometry:1||Medical linear accelerator:1||Medical radioisotopes:1||MoS2/BC3:1||MoSi2N4ribbon:1||Model predictive control:1||Molecule adsorption:1||Monolayer and bilayer:1||Monte Carlo:1||Monte Carlo simulation code:1||NaI(Tl) detector:1||Nano wire:1||Nanofluid:1||Negative hydrogen ion source:1||Nitrogencontained materials:1||Noise reduction:1||Nuclear battery:1||Nuclear quadrupole resonance:1||Nuclear track detector:1||PIG ion source:1||PdPSeX (XO, S, Te):1||PdPX (X = O, S Te) nanosheets:1||Phase shifters:1||Photocatalytic properties:1||Photodegradation:1||Poisson 2D simulations:1||Porous graphitic carbon nitride:1||Puckered pentalike structure:1||Quality factor:1||Quarterwave resonator:1||RANSAC algorithm:1||RF amplifier:1||RF conditioning:1||RF measurement:1||Radio frequency:1||Radio frequency interference:1||Radioisotope:1||Radiopharmaceuticals:1||Raspberry pi:1||SKKUCY9:1||SNIR improvement:1||SNR improvement:1||SSNTD:1||Scattering factor:1||Selfshielding reactor:1||Simulation:1||Singular Spectrum Analysis:1||Slabs:1||Slowwave structure:1||Sn117m:1||Solid target:1||Strain engineering:1||Superconducting:1||Thermal:1||Thermal efficiency:1||Thermal factor:1||Thermoelctric properties:1||Ti2CO2:1||Treatment room:1||Tunable electronic properties:1||Twisted tape:1||Vacancy defect:1||Zinc Antimonide (ZnSb):1||Zinc antimonide (znsb):1||anisotropy:1||arc current:1||atomic doping:1||automated track counting system:1||axis estimation:1||band gaps energy:1||beam trajectory:1||biphenylene monolayer:1||bismuthbased chalcogenides:1||boron neutron capture therapy:1||captured image tracking:1||carbon allotrope:1||carbon nitride:1||collimator:1||contact angle:1||cyclotron RF cavity:1||cyclotron cavity:1||damaged etching track shape restoration:1||defect concentration:1||defect patterns:1||double layer honeycomb structure:1||edge detection methods:1||electric field:1||electrooptical properties:1||electromagnetic field:1||electromagnetic simulation:1||electron beam:1||electronic and photocatalytic properties:1||electronic structures:1||energy conversion devices:1||firstprinciples calculation:1||functionalization:1||graphitic boron carbon nitride:1||high power tunable phase shifter.:1||highpower combiner:1||image capture:1||image enhancement:1||image restoration:1||impedance matching:1||initial velocity:1||intermediate power amplifier (IPA):1||iodinene:1||linear accelerator:1||magnetic material:1||magnetic properties:1||modeling:1||monolayers:1||nanosheet:1||nanosheets:1||neural network:1||neutron yield:1||nuclear engineering computing:1||optical properties study:1||optoelectronics:1||overlapped etched track counting enhancement:1||overlapping tracks:1||oxygen vacancies:1||photocatalytic properties:1||photoneutron convertor:1||poly allyl diglycol carbonate:1||power amplifier:1||puckered pentalike structures:1||radii estimation:1||radioluminescent:1||random processes:1||random sample consensus algorithm:1||refractive index:1||secondary electron gas flow rate:1||semiconductor:1||shape recognition:1||solid state nuclear track detector:1||solidstate nuclear track detectors:1||solidstate radio frequency (RF) amplifier:1||spacecharge limited current:1||spintronic material:1||statistical uncertainty:1||strain engineering:1||theory and applications:1||track analysis method:1||track densitometry:1||track image restoration:1||transitionmetal dichalcogenides:1||twodimensional material:1||twodimensional materials beyond graphene:1||twodimensional nonbenzenoid:1||vacancy defects:1||/C3N and /C3N4 van der Waals heterostructures:1||van der Waals heterostructure:1||14 N NQR:1||2[F18]fluoro2deoxyDglucose [F18]FDG:1||2D Materials:1||ANSYS:1||AVR microcontroller:1||Abinitiodriven prediction:1||Accelerators magnets:1||Adaptive noise and Interference cancellation:1||Adaptive noise cancellation:1||Adsorption of atom:1||Adsorption of molecules:1||AlSb monolayer:1||Alpha irradiation:1||Amplifier:1||Analog output:1||Artificial neural network:1||Atomic embedding:1||Attenuation:1||Attenuators:1||Automated synthesis system:1||Bdoped C3N carbon Nitride:1||Beam line optics:1||Bulk and track etching rates:1||C plus:1||C plus plus language:1||C2N nanosheet:1||C3N nanosheet:1||C6N monolayer:1||C6N7 monolayer:1||CR39 detector:1||CR39 etch detector:1||CST particle studio:1||

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(03063) 25-2, SUNGKYUNKWAN-RO, JONGNO-GU, SEOUL, KOREAsamsunglib@skku.edu

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